Case Studies on Variation Tolerant and Low Power Design Using Planar Asymmetric Double Gate Transistor


Book Description

In nanometer technologies, process variation control and low power have emerged as the first order design goal after high performance. Process variations cause high variability in performance and power consumption of an IC, which affects the overall yield. Short channel effects (SCEs) deteriorate the MOSFET performance and lead to higher leakage power. Double gate devices suppress SCEs and are potential candidates for replacing Bulk technology in nanometer nodes. Threshold voltage control in planar asymmetric double gate transistor (IGFET) using a fourth terminal provides an effective means of combating process variations and low power design. In this thesis, using various case studies, we analyzed the suitability of IGFET for variation control and low power design. We also performed an extensive comparison between IGFET and Bulk for reducing variability, improving yield and leakage power reduction using power gating. We also proposed a new circuit topology for IGFET, which on average shows 33.8 percent lower leakage and 34.9 percent lower area at the cost of 2.8 percent increase in total active mode power, for basic logic gates. Finally, we showed a technique for reducing leakage of minimum sized devices designed using new circuit topology for IGFET.




Planar Double-Gate Transistor


Book Description

Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.




Planar Double-Gate Transistor


Book Description

Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.




CMOS Digital Integrated Circuits


Book Description

The fourth edition of CMOS Digital Integrated Circuits: Analysis and Design continues the well-established tradition of the earlier editions by offering the most comprehensive coverage of digital CMOS circuit design, as well as addressing state-of-the-art technology issues highlighted by the widespread use of nanometer-scale CMOS technologies. In this latest edition, virtually all chapters have been re-written, the transistor model equations and device parameters have been revised to reflect the sigificant changes that must be taken into account for new technology generations, and the material has been reinforced with up-to-date examples. The broad-ranging coverage of this textbook starts with the fundamentals of CMOS process technology, and continues with MOS transistor models, basic CMOS gates, interconnect effects, dynamic circuits, memory circuits, arithmetic building blocks, clock and I/O circuits, low power design techniques, design for manufacturability and design for testability.




FinFETs and Other Multi-Gate Transistors


Book Description

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.




CMOS


Book Description

This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.




Logical Effort


Book Description

Designers of high-speed integrated circuits face a bewildering array of choices and too often spend frustrating days tweaking gates to meet speed targets. Logical Effort: Designing Fast CMOS Circuits makes high speed design easier and more methodical, providing a simple and broadly applicable method for estimating the delay resulting from factors such as topology, capacitance, and gate sizes. The brainchild of circuit and computer graphics pioneers Ivan Sutherland and Bob Sproull, "logical effort" will change the way you approach design challenges. This book begins by equipping you with a sound understanding of the method's essential procedures and concepts-so you can start using it immediately. Later chapters explore the theory and finer points of the method and detail its specialized applications. Features Explains the method and how to apply it in two practically focused chapters. Improves circuit design intuition by teaching simple ways to discern the consequences of topology and gate size decisions. Offers easy ways to choose the fastest circuit from among an array of potential circuit designs. Reduces the time spent on tweaking and simulations-so you can rapidly settle on a good design. Offers in-depth coverage of specialized areas of application for logical effort: skewed or unbalanced gates, other circuit families (including pseudo-NMOS and domino), wide structures such as decoders, and irregularly forking circuits. Presents a complete derivation of the method-so you see how and why it works.




ESD in Silicon Integrated Circuits


Book Description

* Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.




Fundamentals of Modern VLSI Devices


Book Description

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.




Low Power Design Methodologies


Book Description

Low Power Design Methodologies presents the first in-depth coverage of all the layers of the design hierarchy, ranging from the technology, circuit, logic and architectural levels, up to the system layer. The book gives insight into the mechanisms of power dissipation in digital circuits and presents state of the art approaches to power reduction. Finally, it introduces a global view of low power design methodologies and how these are being captured in the latest design automation environments. The individual chapters are written by the leading researchers in the area, drawn from both industry and academia. Extensive references are included at the end of each chapter. Audience: A broad introduction for anyone interested in low power design. Can also be used as a text book for an advanced graduate class. A starting point for any aspiring researcher.