CMOS Test and Evaluation


Book Description

CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variability, applications of embedded test structures and sensors, product yield, and reliability over the lifetime of the product. This book also covers statistical data analysis and visualization techniques, test equipment and CMOS product specifications, and examines product behavior over its full voltage, temperature and frequency range.







Test Generation and Evaluation for Bridging Faults in CMOS VLSI Circuits


Book Description

An efficient automatic test pattern generator for I$sb{DDQ}$ current testing of CMOS digital circuits is presented. The complete two-line bridging fault set is considered. Because of the time constraints of I$sb{DDQ}$ testing, an adaptive genetic algorithm (GA) is used to generate compact test sets. To accurately evaluate the test sets, fault grading is performed using a switch-level fault simulator and a mixed-mode electrical-level fault simulator. The test sets are compared with those generated by HITEC, a traditional gate-level test generator. Experimental results for ISCAS85 and ISCAS89 benchmark circuits are presented. The results show that for I$sb{DDQ}$ testing, the GA test sets outperform the HITEC test sets. When the test sets are truncated due to test time constraints, the fault coverages can differ by 10% or more. In addition to test generation and test evaluation, diagnosis (fault location) is also performed using both test sets. Diagnosis is performed using fault dictionaries constructed during test evaluation. In addition to the traditional full dictionary, two reduced dictionaries are also presented. The results show that the reduced dictionaries offer good size-resolution trade-offs when compared with the full dictionary.




Evaluation of a CMOS/SOS Process Using Process Validation Wafers


Book Description

The objective of this work was to determine baseline electrical parameters that could be used to evaluate a fabrication process. Two lots of wafers containing NBS-16 test chips were fabricated at a commercial vendor in a radiation-hard, CMOS/SOS process. These wafers were then returned to NBS for testing and evaluation. Testing was performed using an automated computer-controlled integrated circuit test system. Test results were evaluated using analysis techniques which provided a statistical estimate of selected parameters and identified spatial correlations between data sets. Further analysis was then performed in order to identify process irregularities. A complete description of the test results and analysis procedure can be found in the appendices.




Testing and Reliable Design of CMOS Circuits


Book Description

In the last few years CMOS technology has become increas ingly dominant for realizing Very Large Scale Integrated (VLSI) circuits. The popularity of this technology is due to its high den sity and low power requirement. The ability to realize very com plex circuits on a single chip has brought about a revolution in the world of electronics and computers. However, the rapid advance ments in this area pose many new problems in the area of testing. Testing has become a very time-consuming process. In order to ease the burden of testing, many schemes for designing the circuit for improved testability have been presented. These design for testability techniques have begun to catch the attention of chip manufacturers. The trend is towards placing increased emphasis on these techniques. Another byproduct of the increase in the complexity of chips is their higher susceptibility to faults. In order to take care of this problem, we need to build fault-tolerant systems. The area of fault-tolerant computing has steadily gained in importance. Today many universities offer courses in the areas of digital system testing and fault-tolerant computing. Due to the impor tance of CMOS technology, a significant portion of these courses may be devoted to CMOS testing. This book has been written as a reference text for such courses offered at the senior or graduate level. Familiarity with logic design and switching theory is assumed. The book should also prove to be useful to professionals working in the semiconductor industry.













Evaluation of Dynamic Current Testing for CMOS Domino Circuits


Book Description

Transient current (iDDT) refers to the current drawn from the power supply durin g the transient switching of CMOS gates. Testing based on the transient current can detect many of the defects that can occur in ICs, such as resistive opens, w hich may not be detected by traditional voltage testing or by Leakage current (I DDQ) testing methods. A major set back for IDDQ testing methods is the increased leakage currents in today's ICs. Thus iDDT based testing has been often investi gated as an alternative or supplement to (IDDQ) testing. Little work has focused on iDDT testing for domino circuits. In this thesis, we propose a method for testing domino CMOS circuits using the transient power supp ly current. The method is based on monitoring the peak value of the transient cu rrent. This peak varies considerably with process variations, so each process ha s different thresholds; this problem will be addressed by proposing a normalizat ion procedure that allows us to use a single threshold for all processes. We pre sent also a test vector generation algorithm for testing large domino circuits. We evaluate the effectiveness of this testing method by simulation on various do mino circuits of different sizes. We develop and implement a partitioning technique to improve the fault coverage of the test method when used with large circuits. The algorithm divides the circ uit into different clusters where each cluster is fed by a different power suppl y branch. We also provide an automation system to simplify the process of genera ting the simulation files, injecting the defects in the circuit, running the sim ulations, storing the simulations output, processing the output signals, and fin ally gathering and analyzing the results.




CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies


Book Description

The monograph will be dedicated to SRAM (memory) design and test issues in nano-scaled technologies by adapting the cell design and chip design considerations to the growing process variations with associated test issues. Purpose: provide process-aware solutions for SRAM design and test challenges.