Compound Semiconductor Integrated Circuits


Book Description

This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies.




Compound Semiconductor Integrated Circuits


Book Description

This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. Contents: Present and Future of High-Speed Compound Semiconductor IC's (T Otsuji); Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.







III-V Integrated Circuit Fabrication Technology


Book Description

GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III-V processing, with emphasis on HBTs. It is aimed at practicing




Reliability And Radiation Effects In Compound Semiconductors


Book Description

This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.




III–V Compound Semiconductors and Devices


Book Description

This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.




Semiconductor Device Physics and Design


Book Description

Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges. It begins with coverage of basic physics concepts, including the physics behind polar heterostructures and strained heterostructures. The book then details the important devices ranging from p-n diodes to bipolar and field effect devices. By relating device design to device performance and then relating device needs to system use the student can see how device design works in the real world.




High-Frequency Integrated Circuits


Book Description

A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave, and optical fibre circuits using nanoscale CMOS, SiGe BiCMOS, and III-V technologies. Step-by-step design methodologies, end-of chapter problems, and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.







THz Communications


Book Description

This book describes the fundamentals of THz communications, spanning the whole range of applications, propagation and channel models, RF transceiver technology, antennas, baseband techniques, and networking interfaces. The requested data rate in wireless communications will soon reach from 100 Gbit/s up to 1 Tbps necessitating systems with ultra-high bandwidths of several 10s of GHz which are available only above 200 GHz. In the last decade, research at these frequency bands has made significant progress, enabling mature experimental demonstrations of so-called THz communications, which are thus expected to play a vital role in future wireless networks. In addition to chapters by leading experts on the theory, modeling, and implementation of THz communication technology, the book also features the latest experimental results and addresses standardization and regulatory aspects. This book will be of interest to both academic researchers and engineers in the telecommunications industry.