Author : R. F. Kopf
Publisher : The Electrochemical Society
Page : 368 pages
File Size : 15,30 MB
Release : 2000
Category : Technology & Engineering
ISBN : 9781566772662
Author : Electrochemical Society. Meeting
Publisher : The Electrochemical Society
Page : 338 pages
File Size : 41,23 MB
Release : 1998
Category : Technology & Engineering
ISBN : 9781566772228
Author : Allan H Johnston
Publisher : World Scientific
Page : 376 pages
File Size : 49,31 MB
Release : 2010-04-27
Category : Technology & Engineering
ISBN : 9814467650
This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.
Author : Athanasios Dimoulas
Publisher : Springer Science & Business Media
Page : 397 pages
File Size : 18,58 MB
Release : 2008-01-01
Category : Technology & Engineering
ISBN : 354071491X
This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Author : Institute of Physics Conference
Publisher : CRC Press
Page : 1352 pages
File Size : 13,15 MB
Release : 2020-10-28
Category : Science
ISBN : 1000157105
Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
Author : Y Arakawa
Publisher : CRC Press
Page : 888 pages
File Size : 42,46 MB
Release : 2002-09-30
Category : Science
ISBN : 1482268981
An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical
Author : Defense Documentation Center (U.S.)
Publisher :
Page : 1032 pages
File Size : 50,96 MB
Release : 1963
Category : Science
ISBN :
Author : Michael Reisch
Publisher : Springer Science & Business Media
Page : 671 pages
File Size : 45,30 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 364255900X
This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author : Herb Goronkin
Publisher : CRC Press
Page : 946 pages
File Size : 47,98 MB
Release : 1995-01-01
Category : Technology & Engineering
ISBN : 9780750302265
Compound Semiconductors 1994 provides a comprehensive overview of research and applications of gallium arsenide, indium phosphide, silicon carbide, and other compound semiconducting materials. Contributed by leading experts, the book discusses growth, characterization, processing techniques, device applications, high-power, high-temperature semiconductor devices, visible emitters and optoelectronic integrated circuits (OEICs), heterojunction transistors, nanoelectronics, and nanophotonics, and simulation and modeling. The book is an essential reference for researchers working on the fabrication of semiconductors, characterization of materials, and their applications for devices, such as lasers, photodiodes, sensors, and transistors, particularly in the high-speed telecommunications industries.
Author : D. Nirmal
Publisher : CRC Press
Page : 434 pages
File Size : 49,87 MB
Release : 2019-05-14
Category : Science
ISBN : 0429862520
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
