Defect Analysis in Electron Microscopy
Author : M. H. Loretto
Publisher : Chapman & Hall
Page : 134 pages
File Size : 12,97 MB
Release : 1975-01-01
Category : Crystals
ISBN : 9780412137600
Author : M. H. Loretto
Publisher : Chapman & Hall
Page : 134 pages
File Size : 12,97 MB
Release : 1975-01-01
Category : Crystals
ISBN : 9780412137600
Author : M. H. Loretto
Publisher :
Page : 152 pages
File Size : 27,51 MB
Release : 1975
Category : Crystals
ISBN :
Author : M.L Jenkins
Publisher : CRC Press
Page : 224 pages
File Size : 13,59 MB
Release : 2000-11-21
Category : Science
ISBN : 9780750307482
Characterization of Radiation Damage by Transmission Electron Microscopy details the electron microscopy methods used to investigate complex and fine-scale microstructures, such as those produced by fast-particle irradiation of metals or ion implantation of semiconductors. The book focuses on the methods used to characterize small point-defect clusters, such as dislocation loops, because the coverage in general microscopy textbooks is limited and omits many of the problems associated with the analysis of these defects. The book also describes in situ, high-resolution, and analytical techniques. Techniques are illustrated with examples, providing a solid overview of the contribution of TEM to radiation damage mechanisms. The book is most useful to researchers in, or entering into, the field of defect analysis in materials.
Author : Johann-Martin Spaeth
Publisher : Springer Science & Business Media
Page : 376 pages
File Size : 13,77 MB
Release : 2012-12-06
Category : Science
ISBN : 3642844057
Strutural Analysis of Point Defects in Solids introduces the principles and techniques of modern electron paramagnetic resonance (EPR) spectroscopy essentialfor applications to the determination of microscopic defect structures. Investigations of the microscopic and electronic structure, and also correlations with the magnetic propertiesof solids, require various multiple magnetic resonance methods, such as ENDOR and optically detected EPR or ENDOR. This book discusses experimental, technological and theoretical aspects of these techniques comprehensively, from a practical viewpoint, with many illustrative examples taken from semiconductors and other solids. The nonspecialist is informed about the potential of the different methods, while the researcher faced with the task of determining defect structures isprovided with the necessary tools, together with much information on computer-aided methods of data analysis and the principles of modern spectrometer design.
Author : Brent Fultz
Publisher : Springer Science & Business Media
Page : 775 pages
File Size : 20,82 MB
Release : 2012-10-14
Category : Science
ISBN : 3642297609
This book explains concepts of transmission electron microscopy (TEM) and x-ray diffractometry (XRD) that are important for the characterization of materials. The fourth edition adds important new techniques of TEM such as electron tomography, nanobeam diffraction, and geometric phase analysis. A new chapter on neutron scattering completes the trio of x-ray, electron and neutron diffraction. All chapters were updated and revised for clarity. The book explains the fundamentals of how waves and wavefunctions interact with atoms in solids, and the similarities and differences of using x-rays, electrons, or neutrons for diffraction measurements. Diffraction effects of crystalline order, defects, and disorder in materials are explained in detail. Both practical and theoretical issues are covered. The book can be used in an introductory-level or advanced-level course, since sections are identified by difficulty. Each chapter includes a set of problems to illustrate principles, and the extensive Appendix includes laboratory exercises.
Author : David B. Williams
Publisher : Springer Science & Business Media
Page : 708 pages
File Size : 18,23 MB
Release : 2013-03-09
Category : Science
ISBN : 1475725191
Electron microscopy has revolutionized our understanding the extraordinary intellectual demands required of the mi of materials by completing the processing-structure-prop croscopist in order to do the job properly: crystallography, erties links down to atomistic levels. It now is even possible diffraction, image contrast, inelastic scattering events, and to tailor the microstructure (and meso structure ) of materials spectroscopy. Remember, these used to be fields in them to achieve specific sets of properties; the extraordinary abili selves. Today, one has to understand the fundamentals ties of modem transmission electron microscopy-TEM of all of these areas before one can hope to tackle signifi instruments to provide almost all of the structural, phase, cant problems in materials science. TEM is a technique of and crystallographic data allow us to accomplish this feat. characterizing materials down to the atomic limits. It must Therefore, it is obvious that any curriculum in modem mate be used with care and attention, in many cases involving rials education must include suitable courses in electron mi teams of experts from different venues. The fundamentals croscopy. It is also essential that suitable texts be available are, of course, based in physics, so aspiring materials sci for the preparation of the students and researchers who must entists would be well advised to have prior exposure to, for carry out electron microscopy properly and quantitatively.
Author : Florian Banhart
Publisher : World Scientific
Page : 318 pages
File Size : 27,47 MB
Release : 2008
Category : Science
ISBN : 9812797335
In-situ high-resolution electron microscopy is a modern and powerful technique in materials research, physics, and chemistry. In-situ techniques are hardly treated in textbooks of electron microscopy. Thus, there is a need to collect the present knowledge about the techniques and achievements of in-situ electron microscopy in one book. Since high-resolution electron microscopes are available in most modern laboratories of materials science, more and more scientists or students are starting to work on this subject.In this comprehensive volume, the most important techniques and achievements of in-situ high-resolution electron microscopy will be reviewed by renowned experts. Applications in several fields of materials science will also be demonstrated.
Author : D. B. Holt
Publisher : Cambridge University Press
Page : 625 pages
File Size : 13,56 MB
Release : 2007-04-12
Category : Science
ISBN : 1139463594
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Author : A.V. Chadwick
Publisher : Springer Science & Business Media
Page : 473 pages
File Size : 13,94 MB
Release : 2013-12-01
Category : Science
ISBN : 1475707614
Author : John Hren
Publisher : Springer Science & Business Media
Page : 609 pages
File Size : 29,67 MB
Release : 2013-11-11
Category : Technology & Engineering
ISBN : 1475755813
The birth of analytical electron microscopy (AEM) is somewhat obscure. Was it the recognition of the power and the development of STEM that signaled its birth? Was AEM born with the attachment of a crystal spectrometer to an otherwise conventional TEM? Or was it born earlier with the first analysis of electron loss spectra? It's not likely that any of these developments alone would have been sufficient and there have been many others (microdiffraction, EDS, microbeam fabrication, etc.) that could equally lay claim to being critical to the establishment of true AEM. It is probably more accurate to simply ascribe the present rapid development to the obvious: a combination of ideas whose time has come. Perhaps it is difficult to trace the birth of AEM simply because it remains a point of contention to even define its true scope. For example, the topics in this book, even though very broad, are still far from a complete description of what many call AEM. When electron beams interact with a solid it is well-known that a bewildering number of possible interactions follow. Analytical electron microscopy attempts to take full qualitative and quantitative advantage of as many of these interactions as possible while still preserving the capability of high resolution imaging. Although we restrict ourselves here to electron transparent films, much of what is described applies to thick specimens as well. Not surprisingly, signals from all possible interactions cannot yet (and probably never will) be attained simultaneously under optimum conditions.