Defect Characterization of Antimonide-based Type-II Superlattices for Infrared Detection
Author : Daniel Yuan Zuo
Publisher :
Page : pages
File Size : 26,7 MB
Release : 2015
Category :
ISBN :
Antimonide-based Type-II Superlattices for Infrared Detection
Author :
Publisher :
Page : pages
File Size : 49,9 MB
Release : 2012
Category :
ISBN :
Book Description
Antimony-based Type-II Superlattice Infrared Photodetectors on Indium-arsenide Substrates
Author : Daniel Y. Zuo
Publisher :
Page : pages
File Size : 25,51 MB
Release : 2011
Category :
ISBN :
Book Description
The wide variety of applications for mid- and far-infrared detection has spurred the study of cutting-edge technologies for use in the next genera- tion of detectors in place of the current systems, such as mercury cadmium telluride. While type-II superlattices over a number of advantages in design and material quality, theoretical predictions of their high performance have yet to be realized. This work concentrates on novel designs, fabrication, and characterization of type-II superlattice infrared detectors. In this work we present the first InAs/GaSb type-II superlattice photode- tectors grown on an InAs substrate via metal-organic chemical vapor depo- sition. The design and fabrication of the devices are detailed, along with several characterization processes, including low-temperature electron beam induced current (EBIC) to study structural defects. Through this work, the optical absorption of the undoped substrate was shown to be significantly lower than that of GaSb. The detectors have a cutoff wavelength (50% re- sponsivity) of 9.5 um at 78 K. Their R0A values are on the order of 10^-2 Ohm*cm2. The typical peak responsivity is 1.9 A/W, and the devices have a peak detectivity of 6.8 * 10^9 cm*Hz^1/2 /W at 78 K.
Antimonide-based Infrared Detectors
Author : Antoni Rogalski
Publisher : SPIE-International Society for Optical Engineering
Page : pages
File Size : 22,84 MB
Release : 2017-09
Category : Antimonides
ISBN : 9781510611399
Book Description
"Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--
Fundamental Research on Infrared Detection
Author :
Publisher :
Page : 31 pages
File Size : 20,61 MB
Release : 2006
Category :
ISBN :
Book Description
Fundamental research issues on infrared photodetectors are reported. These include the following: Task 1. HgCdTe (MCT) defect study Continuing the research on degradation of MCT, we explore the size changing of the dislocation loops and the effect of low-dose electron beam irradiation during TEM analysis. Self-energy correction is included to calculate the MCT defect states. For the photoluminescence image, we correlate the PL images from MCTs and their CZT substrates. Task 2. Antimony-based type-II superlattice (T2-SL) photodetectors We explored the temperature dependent and noise current characteristics of interband cascade detectors (ICDs). We also acquired type-II superlattice photodiodes from Jet Propulsion Lab and obtained a high detectivity of 5.23x1010 cmHz1/2/W at 77 K with devices of 10.5 m cutoff wavelength. Moreover, MOCVD growth of InAs/GaSb type-II superlattices was explored with substrates of both GaSb and GaAs. Task 3. Quantum dot infrared photodetectors (QDIPs) Our work has been focused on the growth and fabrication of high performance QDIP devices based on technologies developed. Defect-free 100-period InAs QD structure has been demonstrated. For InAs QDIPs grown on InP substrates by molecular beam epitaxy (MBE), peak detectivity of 2.1x109 cmHz1/2/W was achieved at a bias voltage of 0.8V.
Infrared and Terahertz Detectors, Third Edition
Author : Antoni Rogalski
Publisher : CRC Press
Page : 1044 pages
File Size : 41,14 MB
Release : 2019-01-10
Category : Technology & Engineering
ISBN : 1351984764
Book Description
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It contains a complete overhaul of the contents including several new chapters and a new section on terahertz detectors and systems. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding. The other dedicated sections focus on thermal detectors, photon detectors, and focal plane arrays.
Infrared Thermography Recent Advances and Future Trends
Author : Carosena Meola
Publisher : Bentham Science Publishers
Page : 254 pages
File Size : 33,75 MB
Release : 2012-08-03
Category : Technology & Engineering
ISBN : 1608051439
Book Description
Infrared thermography (IRT) is a non-contact, non-invasive methodology which allows for detection of thermal energy that is radiated from objects in the infrared band of the electromagnetic spectrum, for conversion of such energy into a visible image (such as a surface temperature map). This feature represents a great potential to be exploited in a vast variety of fields from aerospace to civil engineering, to medicine, to agriculture, etc. However, IRT is still not adequately enclosed in industrial instrumentation and there are still potential users who might benefit from the use of such a technique and who are not aware of their existence. This e-book conveys information about basic IRT theory, infrared detectors, signal digitalization and applications of infrared thermography in many fields such as medicine, foodstuff conservation, fluid-dynamics, architecture, anthropology, condition monitoring, non destructive testing and evaluation of materials and structures. The volume promotes an exchange of information between the academic world and industry, and shares methodologies which were independently developed and applied in specific disciplines.
Growth and Characterization of Type II InxGa1-xSb/InAs Strained Layer Superlattices
Author : David Henry Tomich
Publisher :
Page : 382 pages
File Size : 32,96 MB
Release : 2004
Category :
ISBN :
Book Description
Advances in Infrared Photodetectors
Author :
Publisher : Elsevier
Page : 385 pages
File Size : 45,89 MB
Release : 2011-05-03
Category : Science
ISBN : 0123813387
Book Description
Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry. - Written and edited by internationally renowned experts - Relevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry
Two-dimensional Materials for Photodetector
Author : Pramoda Kumar Nayak
Publisher : BoD – Books on Demand
Page : 244 pages
File Size : 12,46 MB
Release : 2018-04-04
Category : Technology & Engineering
ISBN : 9535139517
Book Description
Atomic thin two-dimensional (2D) materials are the thinnest forms of materials to ever occur in nature and have the potential to dramatically alter and revolutionize our material world. Some of the unique properties of these materials including wide photoresponse wavelength, passivated surfaces, strong interaction with incident light, and high mobility have created tremendous interest in photodetector application. This book provides a comprehensive state-of-the-art knowledge about photodetector technology in the range visible to infrared region using various 2D materials including graphene, transition metal dichalcogenides, III-V semiconductor, and so on. It consists of 10 chapters contributed by a team of experts in this exciting field. We believe that this book will provide new opportunities and guidance for the development of next-generation 2D photodetector.
