Atomic Layer Deposition for Semiconductors


Book Description

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.




Low Energy Ion-Surface Interactions


Book Description

Low Energy Ion--Surface Interactions Edited by J. Wayne Rabalais, University of Houston, Texas, USA Recent advances in experimental techniques and theoretical methodologies mean that increasingly detailed and sophisticated studies of state--or energy--selected molecular ions can now be performed. Each volume in this series will be dedicated to reviewing a specific topic, emphasizing new experimental and theoretical developments in the study of ions. This volume details the current understanding of Low Energy Ion--Surface Interactions, along with some of the novel applications. Each of the ten chapters is authored by active researchers in the field who are at the forefront of research in their particular areas. This up-to-date compilation, detailing developments occurring within the last five years, will be particularly useful to researchers and teachers involved with Low Energy Ion--Surface Interactions.







High-Tc Superconducting Thin Films. AVS Series 6


Book Description

Comprises the proceedings of the AVS topical conference (on title). The two sections address: thin film preparation (sputtering, evaporation) and characterization transport (including spectroscopies, surface and interface processes, and theory). Indexed by author only. Annotation copyright Book News




The Physics and Chemistry of SiO2 and the Si-SiO2 Interface


Book Description

The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.







Adhesion and Friction


Book Description

"Adhesion and Friction: Microscopic Concepts" was the theme of the third workshop on interface phenomena organized jointly by the surface science groups at Dalhousie University and the University of Maine. The first two workshops were dedicated to the discussion of elementary processes governing the reaction rates at surfaces and in bulk materials, i. e. adsorption, desorption and diffusion. In this third year a step towards the understanding of complicated (but practical) issues such as adhesion and friction between different materials was undertaken. The presentations and discussions focused on elementary chemical and physical processes at surfaces and interfaces relevant to adhesion, lubrication and friction and gave an account of the application of surface science methods and techniques to relevant model systems. Clearly, at the time of the conference and the publication of the proceedings the understanding of the chemical and physical mechanisms determining the interaction between two solids is still rudimentary, but the issues involved are attracting the attention of more and more scientists and are now regularly represented at scientific meetings. The conference was held at Dalhousie University in Halifax, Nova Scotia, Canada. The facilities provided an ideal setting for the meeting and lively discussions. On behalf of the participants, we would like to express our grat itude to the staff at Dalhousie University for making our stay so pleasant and memorable.







Handbook of Deposition Technologies for Films and Coatings


Book Description

This 3e, edited by Peter M. Martin, PNNL 2005 Inventor of the Year, is an extensive update of the many improvements in deposition technologies, mechanisms, and applications. This long-awaited revision includes updated and new chapters on atomic layer deposition, cathodic arc deposition, sculpted thin films, polymer thin films and emerging technologies. Extensive material was added throughout the book, especially in the areas concerned with plasma-assisted vapor deposition processes and metallurgical coating applications.