Author : David W. Moss
Publisher :
Page : 170 pages
File Size : 36,71 MB
Release : 1992
Category : Gallium arsenide semiconductors
ISBN :
Author :
Publisher :
Page : 68 pages
File Size : 36,78 MB
Release : 1988
Category :
ISBN :
A new approach for fabricating nonalloyed ohmic contacts to gallium arsenide was developed. The approach uses ultrathin layers of heavily doped germanium or silicon in contact with gallium arsenide to alter the Schottky barrier height(phi B) at the gallium arsenide interface. For n-type gallium arsenide phi B could be varied from about 0.3 to 1.0 eV. The low barriers are useful for tunneling ohmic contacts to n-gallium arsenide while the high barriers should be useful for p-gallium arsenide ohmic contacts and for Field Effect Transistor (FET) gate applications. In some instances it was necessary to interpose a thin nonmetallic electrically conducting barrier between the contact metal and the thin germanium or silicon layer to preserve optimum contact properties. Specific contact resistivity measurements indicated that contact resistivity
Author : Norman G. Einspruch
Publisher : Academic Press
Page : 472 pages
File Size : 46,61 MB
Release : 2014-12-01
Category : Technology & Engineering
ISBN : 1483217779
VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Author : S. N. G. Chu
Publisher : The Electrochemical Society
Page : 408 pages
File Size : 15,33 MB
Release : 1997
Category : Technology & Engineering
ISBN : 9781566771498
Author : Electrochemical Society
Publisher :
Page : 372 pages
File Size : 22,20 MB
Release : 1969
Category : Electric contactors
ISBN :
Author : A. Christou
Publisher : Springer Science & Business Media
Page : 571 pages
File Size : 37,91 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9400924828
This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.
Author :
Publisher :
Page : 652 pages
File Size : 47,77 MB
Release : 1994
Category : Aeronautics
ISBN :
Author : Shirong Zhao
Publisher :
Page : 104 pages
File Size : 13,42 MB
Release : 2016
Category : Gallium nitride
ISBN :
Author : Günter Weimann
Publisher : CRC Press
Page : 880 pages
File Size : 36,35 MB
Release : 1994-01-01
Category : Technology & Engineering
ISBN : 9780750302951
Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Author : Ravi Shankar
Publisher : Academic Press
Page : 502 pages
File Size : 20,44 MB
Release : 2014-12-01
Category : Technology & Engineering
ISBN : 1483217841
VLSI Electronics Microstructure Science, Volume 20: VLSI and Computer Architecture reviews the approaches in design principles and techniques and the architecture for computer systems implemented in VLSI. This volume is divided into two parts. The first section is concerned with system design. Chapters under this section focus on the discussion of such topics as the evolution of VLSI; system performance and processor design considerations; and VLSI system design and processing tools. Part II of the book focuses on the architectural possibilities that have become cost effective with the development of VLSI circuits. Topics on architectural requirements and various architectures such as the Reduced Instruction Set, Extended Von Neumann, Language-Oriented, and Microprogrammable architectures are elaborated in detail. Also included are chapters that discuss the evaluation of architecture, multiprocessing configurations, and the future of VLSI. Computer designers, those evaluating computer systems, researchers, and students of computer architecture will find the book very useful.
