Device Physics of Narrow Gap Semiconductors


Book Description

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.




Narrow-gap Semiconductor Photodiodes


Book Description

In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.




Physics and Properties of Narrow Gap Semiconductors


Book Description

Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.










Fundamentals of Semiconductors


Book Description

Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.




Semiconductor Optoelectronic Devices


Book Description

Optoelectronics has become an important part of our lives. Wherever light is used to transmit information, tiny semiconductor devices are needed to transfer electrical current into optical signals and vice versa. Examples include light emitting diodes in radios and other appliances, photodetectors in elevator doors and digital cameras, and laser diodes that transmit phone calls through glass fibers. Such optoelectronic devices take advantage of sophisticated interactions between electrons and light. Nanometer scale semiconductor structures are often at the heart of modern optoelectronic devices. Their shrinking size and increasing complexity make computer simulation an important tool to design better devices that meet ever rising perfomance requirements. The current need to apply advanced design software in optoelectronics follows the trend observed in the 1980's with simulation software for silicon devices. Today, software for technology computer-aided design (TCAD) and electronic design automation (EDA) represents a fundamental part of the silicon industry. In optoelectronics, advanced commercial device software has emerged recently and it is expected to play an increasingly important role in the near future. This book will enable students, device engineers, and researchers to more effectively use advanced design software in optoelectronics. - Provides fundamental knowledge in semiconductor physics and in electromagnetics, while helping to understand and use advanced device simulation software - Demonstrates the combination of measurements and simulations in order to obtain realistic results and provides data on all required material parameters - Gives deep insight into the physics of state-of-the-art devices and helps to design and analyze of modern optoelectronic devices




Narrow Gap Semiconductors 1995


Book Description

Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.




Semiconductor Material and Device Characterization


Book Description

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.




Resonant Tunneling in Semiconductors


Book Description

This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.