Physics of DX Centers in GaAs Alloys


Book Description

The DX center is a defect present in Gallium Arsenide and related alloys when these materials are doped with n-type impurities. The interest for the DX center is twofold: fundamental and technological. For physicists, the DX center exhibits peculiar properties which clearly indicate that it belongs to a new class of defect which had not yet been encountered. The identification of the DX center is also interesting for the technologists now that heterostructures based on the GaAs-GaAlAs system are increasingly used to realize high performance devices. As any deep level, the DX center traps free electrons, thus reducing the free carrier concentration provided by the donor impurities and their mobility.







Defects and Diffusion in Semiconductors


Book Description

This second volume in the new-format coverage of the latest results in the field covers abstracts from the approximate period of mid-1998 to mid-1999. As always, due to the vagaries of some journal publication dates, abstracts of earlier work may be included in order that the present contents merge seamlessly with those of volumes 162-163; the previous issue in this sub-series.




DX Centers


Book Description

During the last 25 years, the behavior of donors in III-V alloys has been the subject of a very extensive research effort. The research emphasis on AlGaAs compounds is motivated by the industrial importance of AlGaAs/GaAs heterojunction based devices. As seeing it now, the DX center problem, the behavior of donors in III-V alloys, has shown to be unexpectedly difficult to understand. To determine the microscopic nature of the DX center is still a challenging problem.




Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996


Book Description

Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.




High Speed Heterostructure Devices


Book Description

Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed Offers a complete, three-chapter review of resonant tunneling Provides an emphasis on circuits as well as devices







Materials and Reliability Handbook for Semiconductor Optical and Electron Devices


Book Description

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.