Electron Transport Within Compound Semiconductors with an Emphasis on the Cubic Phase of Boron Nitride


Book Description

the scattering component due to these defect lines is found to be the dominant mechanism, particularly at low temperatures and doping concentrations. The total mobility being reduced from the order of 1000 cm2/V·s to the order of 100 cm2/V·s. A theoretical limit analysis reveals that the reduction in total mobility can be mitigated by reducing the threading dislocation line density below 107 cm−2, resulting in an expected 0.1% or less loss in total mobility. Finally, we suggest a method by which the uncertainty in the material parameters and the corresponding impact on the total mobility can be analyzed, the preliminary results confirming that the threading dislocation line component is the dominant source of scattering out of the mechanisms considered.




Advanced Physics of Electron Transport in Semiconductors and Nanostructures


Book Description

This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.










Initial Stages of Thin Film Deposition


Book Description

Finally, in-situ high energy electron bombardment and high-resolution electron microscopy are used to reveal the formation of nanoarches in hexagonal boron nitride. The nanoarch structures are shown to be possible nucleation sites for the cubic phase of boron nitride, and the growth of cubic boron nitride thin films is explained based on this new nucleation mechanism.




III–V Semiconducting Compounds


Book Description

The Electronic Properties Information Center has developed the Data Table as a precis of the most reliable information available for the physical, crystallographic, mechanical, thermal, electronic, magnetic and optical properties of a given material. Data Tables serve as an introduction to the graphic data compilations on the material published by the Electronic Properties Information Center, EPIC, as Data Sheets. Although the Data Sheets are principally concerned, according to the scope of the Center, with electronic and optical data, it is believed that data covering the complete property spectrum is of the first importance to every scientist and engineer, whatever his information requirements. The enthusiastic reception of these Data Tables has confirmed this opinion and increasing requests for this highly selective type of information has resulted in these III·-V Semiconductor Compounds Data Tables. The major problem in this type of selective data compilation on a semiconducting material, lies in the material purity. Properties may vary so widely with doping, crystallinity, defects, geometric forms and the other parameters of preparation, that any attempts at comparison normally fail. On this basis, we have consis tently attempted to give values derived from experiments on the highest purity single crystals or epitaxial films. At the very least, these data should be reproducible and this gives the data their principal validity. If such values however, are not available, then the next best data are reported, together with material speci fications. These latter include the carrier concentration and the dopant.







Ceramic Abstracts


Book Description




Ternary Alloys Based on III-V Semiconductors


Book Description

III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light-emitting diodes and solar cells. Because of their wide applications in a variety of devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. This new book covers all known information about phase relations in ternary systems based on III-V semiconductors. This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid state physicists.