Scientific and Technical Aerospace Reports
Author :
Publisher :
Page : 704 pages
File Size : 35,89 MB
Release : 1995
Category : Aeronautics
ISBN :
Author :
Publisher :
Page : 704 pages
File Size : 35,89 MB
Release : 1995
Category : Aeronautics
ISBN :
Author : Fernando Agullo-rueda
Publisher : World Scientific
Page : 269 pages
File Size : 18,78 MB
Release : 1995-04-17
Category : Science
ISBN : 9814501255
This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths.
Author : Raphael Tsu
Publisher : Elsevier
Page : 346 pages
File Size : 41,55 MB
Release : 2010-10-22
Category : Technology & Engineering
ISBN : 0080968147
Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their origins in 1969. Topics discussed include the birth of the superlattice; resonant tunneling via man-made quantum well states; optical properties and Raman scattering in man-made quantum systems; dielectric function and doping of a superlattice; and quantum step and activation energy. The book also covers semiconductor atomic superlattice; Si quantum dots fabricated from annealing amorphous silicon; capacitance, dielectric constant, and doping quantum dots; porous silicon; and quantum impedance of electrons. - Written by one of the founders of this field - Delivers over 20% new material, including new research and new technological applications - Provides a basic understanding of the physics involved from first principles, while adding new depth, using basic mathematics and an explanation of the background essentials
Author : S. Mahajan
Publisher : Elsevier
Page : 607 pages
File Size : 10,16 MB
Release : 2013-10-22
Category : Technology & Engineering
ISBN : 1483286576
The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.
Author : Library of Congress
Publisher :
Page : 1590 pages
File Size : 28,65 MB
Release : 1996
Category : Subject headings, Library of Congress
ISBN :
Author : Library of Congress. Cataloging Policy and Support Office
Publisher :
Page : 1662 pages
File Size : 34,40 MB
Release : 2004
Category : Subject headings, Library of Congress
ISBN :
Author : E. Kasper
Publisher : CRC Press
Page : 306 pages
File Size : 20,9 MB
Release : 2018-05-04
Category : Technology & Engineering
ISBN : 1351085077
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author : University of California, Davis. Graduate Division
Publisher :
Page : 88 pages
File Size : 29,44 MB
Release : 1989
Category : Commencement ceremonies
ISBN :
Author : Winfried Mönch
Publisher : Springer Science & Business Media
Page : 269 pages
File Size : 42,67 MB
Release : 2013-04-17
Category : Technology & Engineering
ISBN : 3662069458
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Author :
Publisher :
Page : 104 pages
File Size : 29,41 MB
Release : 1991
Category : High performance computing
ISBN :