Book Description

Drawing on decades of Russian semiconductor research, this remarkable book makes available a great many Si and III-V semiconductor technologies that are practically unknown in the West. Often simpler and cheaper than conventional Western methods, these approaches will enable researchers to improve the quality of semiconductor materials and fabricate new types of devices. After a general introduction to semiconductor technology, the book describes transmutation doping, which offers all the advantages of neutron doping, permits controlled doping depth from 0.1 micron to 1mm, and offers the option of forming deep channels. Also presented is a novel technique using polymer spinon diffusant films for a uniform and reproducible introduction of impurities into silicon. Simpler and less expensive, too, are the reproducible processes using rare-earth elements in the synthesis of various III-V compounds. The parameters of monocrystals and epilayers grown with these elements are equal to those obtained by more complicated and expensive techniques, such as MBE and MOVPE. This invaluable manual explains the processes and advantages of generation-relaxation of nonequilibrium intrinsic defects in Si and introduces new ideas related to the role these defects may play in the formation of the generation-recombination centers in silicon. Also described in these chapters are many original techniques for external and intrinsic gettering in different semiconductors. Important experimental results dealing with isovalent doping of direct gap III-V compounds grown by different epitaxial methods are presented in detail by leading experts. These researchers also show how to achieve precise control of material properties for all principal methods of epitaxial growth. The final section describes nontraditional techniques for photochemical etching and the production of holographic diffraction grating by means of maskless chemical etching. This technique offers the highest resolution and can be applied to more than 20 semiconductor materials, including single crystal, polycrystalline, and amorphous materials. Researchers and graduate students in solid state physics, device physics, materials science, and electrical engineering will find a wealth of original, stimulating, and valuable information in this unique manual. New, more effective techniques for semiconductor processing and fabrication The product of decades of Russian research in semiconductor technology, this invaluable book offers Western researchers and engineers a wide range of new techniques, recipes, and characterization methods that provide simpler, cheaper, and more effective solutions to problems in semiconductor processing and fabrication. Many of these approaches appear here for the first time in Western technological literature. Included are: * Transmutation doping of semiconductors by charged particles * Polymer diffusants in semiconductor technology * Rare-earth elements in III-V compounds * Intrinsic point defect engineering in silicon high-voltage power device technology * Isovalent impurity doping of direct-gap III-V semiconductor layers * Surface passivation of III-V compounds by inorganic dielectrics and polymides * Precision profiling of semiconductor surfaces by means of photochemical etching