SiC Technology
Author : Maurizio Di Paolo Emilio
Publisher : Springer Nature
Page : 317 pages
File Size : 35,16 MB
Release :
Category :
ISBN : 3031634187
Wide Bandgap Semiconductor Power Devices
Author : B. Jayant Baliga
Publisher : Woodhead Publishing
Page : 420 pages
File Size : 46,66 MB
Release : 2018-10-17
Category : Technology & Engineering
ISBN : 0081023073
Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Frontiers of Engineering
Author : National Academy of Engineering
Publisher : National Academies Press
Page : 141 pages
File Size : 31,19 MB
Release : 2018-02-22
Category : Technology & Engineering
ISBN : 0309466016
Book Description
This volume presents papers on the topics covered at the National Academy of Engineering's 2017 US Frontiers of Engineering Symposium. Every year the symposium brings together 100 outstanding young leaders in engineering to share their cutting-edge research and innovations in selected areas. The 2017 symposium was held September 25-27 at the United Technologies Research Center in East Hartford, Connecticut. The intent of this book is to convey the excitement of this unique meeting and to highlight innovative developments in engineering research and technical work.
Aspencore Guide to Gallium Nitride
Author : Maurizio Di Paolo Emilio
Publisher :
Page : 160 pages
File Size : 47,20 MB
Release : 2021-01-20
Category :
ISBN : 9781735813127
Book Description
As silicon reaches its theoretical performance limits for power electronics, industry is shifting toward wide-bandgap materials like Gallium Nitride (GaN), whose properties provide clear benefits in power converters for consumer and industrial electronics. In over 150 pages covering the technology, its applications, markets and future potential, this book delves into GaN technology and its importance for power electronics professionals engaged with its implementation in power devices. The properties of GaN, such as low leakage current, significantly reduced power losses, higher power density and the ability to tolerate higher operating temperatures, all from a device smaller than its silicon-only equivalent, provide design advantages allowing previously unimaginable application performance. As an alternative to silicon, GaN can provide clear benefits in power converters for consumer and industrial electronics; chargers for wireless devices, including 5G; driver circuits for motor control; and power switches in automotive and space applications.The book also explores why GaN-based devices hold the key to addressing the energy efficiency agenda, a key strategic initiative in increasingly power-reliant industries such as data centers, electric vehicles, and renewable energy systems. Highly efficient residential and commercial energy storage systems using GaN technology will enable distribution, local storage, and on-demand access to renewable energy. Continued progress in the battery market will lead to declining battery costs and the development of smaller batteries that pair with GaN technology-based converters and inverters. Thermal management is critical in power electronics, and high efficiency in higher-power systems is always a focus. With GaN, a 50% reduction in losses can be achieved, reducing the costs and area required to manage heat. The book delves into GaN's electrical characteristics and how these can be exploited in power devices. There are also chapters that cross into the key applications for GaN devices for several markets such as space, automotive, audio, motor control and data centers. Each chapter provides a comprehensive overview of the subject matter for anyone who wants to stay on the leading edge of power electronics.
GaN Transistors for Efficient Power Conversion
Author : Alex Lidow
Publisher : John Wiley & Sons
Page : 518 pages
File Size : 34,92 MB
Release : 2019-08-12
Category : Science
ISBN : 1119594421
Book Description
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Wide Bandgap Semiconductor-based Electronics
Author : Fan Ren
Publisher :
Page : 0 pages
File Size : 33,92 MB
Release : 2020
Category : Gallium arsenide semiconductors
ISBN : 9780750325165
Book Description
"Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas." -- Prové de l'editor.
Power GaN Devices
Author : Matteo Meneghini
Publisher : Springer
Page : 383 pages
File Size : 44,51 MB
Release : 2016-09-08
Category : Technology & Engineering
ISBN : 3319431994
Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Electrical & Electronics Abstracts
Author :
Publisher :
Page : 1606 pages
File Size : 29,95 MB
Release : 1989
Category : Electrical engineering
ISBN :
Book Description
Silicon Carbide Power Devices
Author : B. Jayant Baliga
Publisher : World Scientific
Page : 526 pages
File Size : 40,62 MB
Release : 2006-01-05
Category : Technology & Engineering
ISBN : 9812774521
Book Description
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
Power Electronics for Renewable Energy Systems, Transportation and Industrial Applications
Author : Haitham Abu-Rub
Publisher : John Wiley & Sons
Page : 1080 pages
File Size : 25,3 MB
Release : 2014-06-02
Category : Technology & Engineering
ISBN : 1118755502
Book Description
Compiles current research into the analysis and design of power electronic converters for industrial applications and renewable energy systems, presenting modern and future applications of power electronics systems in the field of electrical vehicles With emphasis on the importance and long-term viability of Power Electronics for Renewable Energy this book brings together the state of the art knowledge and cutting-edge techniques in various stages of research. The topics included are not currently available for practicing professionals and aim to enable the reader to directly apply the knowledge gained to their designs. The book addresses the practical issues of current and future electric and plug-in hybrid electric vehicles (PHEVs), and focuses primarily on power electronics and motor drives based solutions for electric vehicle (EV) technologies. Propulsion system requirements and motor sizing for EVs is discussed, along with practical system sizing examples. Key EV battery technologies are explained as well as corresponding battery management issues. PHEV power system architectures and advanced power electronics intensive charging infrastructures for EVs and PHEVs are detailed. EV/PHEV interface with renewable energy is described, with practical examples. This book explores new topics for further research needed world-wide, and defines existing challenges, concerns, and selected problems that comply with international trends, standards, and programs for electric power conversion, distribution, and sustainable energy development. It will lead to the advancement of the current state-of-the art applications of power electronics for renewable energy, transportation, and industrial applications and will help add experience in the various industries and academia about the energy conversion technology and distributed energy sources. Combines state of the art global expertise to present the latest research on power electronics and its application in transportation, renewable energy and different industrial applications Offers an overview of existing technology and future trends, with discussion and analysis of different types of converters and control techniques (power converters, high performance power devices, power system, high performance control system and novel applications) Systematic explanation to provide researchers with enough background and understanding to go deeper in the topics covered in the book
