Formation of Silicon Nitride from the 19th to the 21st Century


Book Description

The elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/H), and many related, reaction systems; although Si-O and Si-C are formidable competitors to Si-N. The most favored Si-N compound is stoichiometric Si3N4. It comes in three common varieties. How they interrelate, how one finds them and (above all ) how one makes them - and how sometimes they just happen to form - are the subjects of this book, with due attention being paid to closely related matters. This revised second edition summarizes and integrates what is recorded in the world literature from 1857through 2014 as being known about the formation of silicon nitride – Si3N4 – and itsclose relatives. The book is the key to all that has been learned, over the past 150 years, about how silicon nitride comes to exist: in nature, in the laboratory or in the factory and in many reaction systems; together with how it is used in ceramics, electronic films, optical coatings and many other ways (including an introduction to closely related substances). It will aid the researcher in designing new projects, the supervisor in briefing new employees, the salesman in working with new customers, the patent attorney in assessing patents and the professor in designing graduate course assignments. This comprehensive reference gathers information published on the chemistry of silicon nitride and its products, uses, and markets. Separate chapters overview the manufacture of silicon nitride powder, the production of silicon nitride ceramics via the reaction bonding process, the intrinsic reactions between crystalline silicon surfaces and N2 for silicon wafers, nitridation of Si-O based materials, and chemical vapor deposition of Si-H compounds.




Formation of Silicon Nitride from the 19th to the 21st Century


Book Description

This comprehensive reference gathers information published on the chemistry of silicon nitride and its products, uses, and markets. Separate chapters overview the manufacture of silicon nitride powder, the production of silicon nitride ceramics via the reaction bonding process, the intrinsic reactions between crystalline silicon surfaces and N2 for silicon wafers, nitridation of Si-O based materials, and chemical vapor deposition of Si-H compounds. The author, who originally worked on a similar book for the Gmelin Institute, cites 4,000-plus source documents and points the researcher to relevant handbooks, papers, and review articles for further reading. Distributed in the U.S. by Enfield. Annotation : 2005 Book News, Inc., Portland, OR (booknews.com).




Formation of Silicon Nitride


Book Description

The elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/H), and many related, reaction systems; although Si-O and Si-C are formidable competitors to Si-N. The most favored Si-N compound is stoichiometric Si3N4. It comes in three common varieties. How they interrelate, how one finds them and (above all ) how one makes them - and how sometimes they just happen to form - are the subjects of this book, with due attention being paid to closely related matters.







Silicon Nitride in Electronics


Book Description

This book is an English version, expanded and brought up to date, of the Russian book published in 1982. It has been written by a group of authors - chemists and physicists - and is designed particularly for specialists who are developing semiconductor devices. Silicon nitride has long been familiar as a material used in the process of manufacturing fire-proof products. During the past decade, it has come into use as a thin dielectric film in electronics, and at present silicon nitride synthesis underlies the basic technology for integrated circuits. The monograph discusses the characteristics that determine the process of synthesis of silicon nitride films, their structure, chemical composition, optical and electrophysical properties, as well as various applications of silicon nitride in electronics.







Ceramic Processing


Book Description

Materials scientists continue to develop stronger, more versatile ceramics for advanced technological applications, such as electronic components, fuel cells, engines, sensors, catalysts, superconductors, and space shuttles. From the start of the fabrication process to the final fabricated microstructure, Ceramic Processing covers all aspects of modern processing for polycrystalline ceramics. Stemming from chapters in the author's bestselling text, Ceramic Processing and Sintering, this book gathers additional information selected from many sources and review articles in a single, well-researched resource. The author outlines the most commonly employed ceramic fabrication processes by the consolidation and sintering of powders. A systematic approach highlights the importance of each step as well as the interconnection between the various steps in the overall fabrication route. The in-depth treatment of production methods includes powder, colloidal, and sol-gel processing as well as chemical synthesis of powders, forming, sintering, and microstructure control. The book covers powder preparation and characterization, organic additives in ceramic processing, mixing and packing of particles, drying, and debinding. It also describes recent technologies such as the synthesis of nanoscale powders and solid freeform fabrication. Ceramic Processing provides a thorough foundation and reference in the production of ceramic materials for advanced undergraduates and graduate students as well as professionals in corporate training or professional courses.




Proceedings of the Unified International Technical Conference on Refractories (UNITECR 2013)


Book Description

Proceedings containing 231 manuscripts that were submitted and approved for the 13th biennial worldwide refractories congress recognized as the Unified International Technical Conference on Refractories(UNITECR), held September 10-13, 2013.




Silicon Nitride for Microelectronic Applications


Book Description

The large amount of literature on the technology of thin film silicon nitride indi cates the interest of the Department of Defense, NASA and the semiconductor industry in the development and full utilization of the material. This survey is concerned only with the thin film characteristics and properties of silicon nitride as currently utilized by the semiconductor or microelectronics industry. It also includes the various methods of preparation. Applications in microelectronic devices and circuits are to be provided in Part 2 of the survey. Some bulk silicon nitride property data is included for basic reference and comparison purposes. The survey specifically excludes references and information not within the public domain. ACKNOWLEDGEMENT This survey was generated under U.S. Air Force Contract F33615-70-C-1348, with Mr. B.R. Emrich (MAAM) Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio acting as Project Engineer. The author would like to acknowledge the assis tance of Dr. Judd Q. Bartling, Litton Systems, Inc., Guidance and Control Systems Division, Woodland Hills, California and Dr. Thomas C. Hall, Hughes Aircraft Company, Culver City, California in reviewing the survey. v CONTENTS Preface. i Introduction 1 Literature Review. 1 Bulk Characteristics 1 Technology Overview. 2 References 4 Methods of Preparation • 5 Introduction • 5 Direct Nitridation Method 8 Evaporation Method • 9 Glow Discharge Method. 10 Ion Beam Method. 13 Sputtering Methods 13 Pyrolytic Methods. 15 Silane and Ammonia Reaction 15 Silicon Tetrachloride and Tetrafluoride Reaction. 24 Silane and Hydrazine Reaction 27 Production Operations. 28 Equipment.