Fundamentals of Crystal Growth I


Book Description

The intrinsic properties of a solid, i. e. , the properties that result from its specific structure, can be largely modified by crystallographic and chem ical defects. The formation of these defects is governed by the heat and mass transfer conditions which prevail on and near a crystal-nutrient in terface during crystallization. Hence, both the growth of highly perfect crystals and the preparation of samples having predetermined defect-induced (extrinsic) properties require a thorough understanding of the reaction and transport mechanisms that govern crystallization from vapors, solutions and melts. Crystal growth, as a science, is therefore mostly concerned with the chemistry and physics of heat and mass transport in these fluid-solid phase transitions. Solid-solid transitions are, at this time, not widely employed for high quality single-crystal production. Transport concepts are largely built upon equilibrium considerations, i. e. , on thermodynamic and phase equilibrium concepts. Hence to supply a "workable" foundation for the succeeding discussions, this text begins in Chapter 2 with a concise treatment of thermodynamics which emphasizes applications to mate rials preparation. After working through this chapter, the reader should feel at ease with often (particularly among physicists) unfamiliar entities such as chemical potentials, fugacities, activities. etc. Special sections on ther mochemical calculations (and their pitfalls) and compilations of thermochemi cal data conclude the second chapter. Crystal growth can be called. in a wide sense, the science and technology of controlling phase transitions that lead to (single crystalline) solids.




Handbook of Crystal Growth


Book Description

Volume IAHandbook of Crystal Growth, 2nd Edition (Fundamentals: Thermodynamics and Kinetics) Volume IA addresses the present status of crystal growth science, and provides scientific tools for the following volumes: Volume II (Bulk Crystal Growth) and III (Thin Film Growth and Epitaxy). Volume IA highlights thermodynamics and kinetics. After historical introduction of the crystal growth, phase equilibria, defect thermodynamics, stoichiometry, and shape of crystal and structure of melt are described. Then, the most fundamental and basic aspects of crystal growth are presented, along with the theories of nucleation and growth kinetics. In addition, the simulations of crystal growth by Monte Carlo, ab initio-based approach and colloidal assembly are thoroughly investigated. Volume IBHandbook of Crystal Growth, 2nd Edition (Fundamentals: Transport and Stability) Volume IB discusses pattern formation, a typical problem in crystal growth. In addition, an introduction to morphological stability is given and the phase-field model is explained with comparison to experiments. The field of nanocrystal growth is rapidly expanding and here the growth from vapor is presented as an example. For the advancement of life science, the crystal growth of protein and other biological molecules is indispensable and biological crystallization in nature gives many hints for their crystal growth. Another subject discussed is pharmaceutical crystal growth. To understand the crystal growth, in situ observation is extremely powerful. The observation techniques are demonstrated. Volume IA Explores phase equilibria, defect thermodynamics of Si, stoichiometry of oxides and atomistic structure of melt and alloys Explains basic ideas to understand crystal growth, equilibrium shape of crystal, rough-smooth transition of step and surface, nucleation and growth mechanisms Focuses on simulation of crystal growth by classical Monte Carlo, ab-initio based quantum mechanical approach, kinetic Monte Carlo and phase field model. Controlled colloidal assembly is presented as an experimental model for crystal growth. Volume IIB Describes morphological stability theory and phase-field model and comparison to experiments of dendritic growth Presents nanocrystal growth in vapor as well as protein crystal growth and biological crystallization Interprets mass production of pharmaceutical crystals to be understood as ordinary crystal growth and explains crystallization of chiral molecules Demonstrates in situ observation of crystal growth in vapor, solution and melt on the ground and in space




Crystal Growth for Beginners


Book Description

This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of mathematics and physics. All formulae and equations are accompanied by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. The second revised edition includes two separate chapters dealing with the effect of the Enrich-Schwoebel barrier for down-step diffusion, as well as the effect of surface active species, on the morphology of the growing surfaces. In addition, many other chapters are updated accordingly. Thus, it serves as a valuable reference book for both graduate students and researchers in materials science.




Fundamentals of Crystal Growth I


Book Description

The intrinsic properties of a solid, i. e. , the properties that result from its specific structure, can be largely modified by crystallographic and chem ical defects. The formation of these defects is governed by the heat and mass transfer conditions which prevail on and near a crystal-nutrient in terface during crystallization. Hence, both the growth of highly perfect crystals and the preparation of samples having predetermined defect-induced (extrinsic) properties require a thorough understanding of the reaction and transport mechanisms that govern crystallization from vapors, solutions and melts. Crystal growth, as a science, is therefore mostly concerned with the chemistry and physics of heat and mass transport in these fluid-solid phase transitions. Solid-solid transitions are, at this time, not widely employed for high quality single-crystal production. Transport concepts are largely built upon equilibrium considerations, i. e. , on thermodynamic and phase equilibrium concepts. Hence to supply a "workable" foundation for the succeeding discussions, this text begins in Chapter 2 with a concise treatment of thermodynamics which emphasizes applications to mate rials preparation. After working through this chapter, the reader should feel at ease with often (particularly among physicists) unfamiliar entities such as chemical potentials, fugacities, activities. etc. Special sections on ther mochemical calculations (and their pitfalls) and compilations of thermochemi cal data conclude the second chapter. Crystal growth can be called. in a wide sense, the science and technology of controlling phase transitions that lead to (single crystalline) solids.







Crystal Growth Technology


Book Description

This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.




Introduction to Crystal Growth and Characterization


Book Description

This new textbook provides for the first time a comprehensive treatment of the basics of contemporary crystallography and crystal growth in a single volume. The reader will be familiarized with the concepts for the description of morphological and structural symmetry of crystals. The architecture of crystal structures of selected inorganic and molecular crystals is illustrated. The main crystallographic databases as data sources of crystal structures are described. Nucleation processes, their kinetics and main growth mechanism will be introduced in fundamentals of crystal growth. Some phase diagrams in the solid and liquid phases in correlation with the segregation of dopants are treated on a macro- and microscale. Fluid dynamic aspects with different types of convection in melts and solutions are discussed. Various growth techniques for semiconducting materials in connection with the use of external field (magnetic fields and microgravity) are described. Crystal characterization as the overall assessment of the grown crystal is treated in detail with respect to - crystal defects - crystal quality - field of application Introduction to Crystal Growth and Characterization is an ideal textbook written in a form readily accessible to undergraduate and graduate students of crystallography, physics, chemistry, materials science and engineering. It is also a valuable resource for all scientists concerned with crystal growth and materials engineering.




Handbook of Crystal Growth


Book Description




Statistical Physics of Crystal Growth


Book Description

This book gives a systematic overview on the scientific fundamentals of crystal growth from the classical phenomenological description to the recent theoretical contributions of statistical physics such as studies on surface roughening and on the pattern formation in the diffusion-limited growth.The book emphasizes physical concepts as well as mathematical details, and is intended to serve as lecture notes for postgraduate courses.




50 Years Progress in Crystal Growth


Book Description

There is no question that the field of solid state electronics, which essentially began with work at Bell laboratories just after World War II, has had a profound impact on today's Society. What is not nearly so widely known is that advances in the art and science of crystal growth underpin this technology. Single crystals, once valued only for their beauty, are now found, in one form or another in most electronic, optoelectronic and numerous optical devices. These devices, in turn, have permeated almost every home and village throughout the world. In fact it is hard to imagine what our electronics industry, much less our entire civilization, would have been like if crystal growth scientists and engineers were unable to produce the large, defect free crystals required by device designers. This book brings together two sets of related articles describing advances made in crystal growth science and technology since World War II. One set is from the proceedings of a Symposium held in August 2002 to celebrate 50 years of progress in the field of crystal growth. The second contains articles previously published in the newsletter of the American Association for Crystal Growth in a series called "Milestones in Crystal Growth".The first section of this book contains several articles which describe some of the early history of crystal growth prior to the electronics revolution, and upon which modern crystal growth science and technology is based. This is followed by a special article by Prof. Sunagawa which provides some insight into how the successful Japanese crystal growth industry developed. The next section deals with crystal growth fundamentals including concepts of solute distribution, interface kinetics, constitutional supercooling, morphological stability and the growth of dendrites. The following section describes the growth of crystals from melts and solutions, while the final part involves thin film growth by MBE and OMVPE.These articles were written by some of the most famous theorists and crystal growers working in the field. They will provide future research workers with valuable insight into how these pioneering discoveries were made, and show how their own research and future devices will be based upon these developments. · Articles written by some of the most famous theorists and crystal growers working in the field· Valuable insight into how pioneering discoveries were made.· Show how their own research and future devices will be based upon these developments