Author : Rüdiger Quay
Publisher : Springer Science & Business Media
Page : 492 pages
File Size : 15,87 MB
Release : 2008-04-05
Category : Technology & Engineering
ISBN : 3540718923
This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Author : Stephen J. Pearton
Publisher : Springer Science & Business Media
Page : 383 pages
File Size : 40,59 MB
Release : 2006-07-06
Category : Technology & Engineering
ISBN : 1846283590
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Author : Gaudenzio Meneghesso
Publisher : Springer
Page : 242 pages
File Size : 29,53 MB
Release : 2018-05-12
Category : Technology & Engineering
ISBN : 331977994X
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
Author : Dirk Ehrentraut
Publisher : Springer Science & Business Media
Page : 337 pages
File Size : 17,49 MB
Release : 2010-06-14
Category : Science
ISBN : 3642048307
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Author : Kiera Olivia Peak
Publisher : Nova Science Publishers
Page : 0 pages
File Size : 40,33 MB
Release : 2014
Category : Electronics
ISBN : 9781633213876
Gallium nitride (GaN), a member of the family of III-V semiconductor compounds, has been investigated intensively and have found extensive applications. Recent development has suggested that GaN may be used as an excellent host material for light-emitting devices (LEDs) that operate in the blue and ultraviolet region, due to its wide and direct band gap. Nano-materials often present novel properties that are different from the corresponding bulk materials due to their unique structures, high specific surface area and quantum confinement effects. This book discusses several topics on the structure, thermal properties and applications of GaN. Some of these topics include the effects of radiation damage in GaN and and related materials; low-dimensional GaN; structural and dielectric properties of the GaN and silica nanoparticles investigated by molecular dynamics; and GaN bulk and nanostructures for spintronic application.
Author : B Jayant Baliga
Publisher : World Scientific Publishing Company
Page : 592 pages
File Size : 27,12 MB
Release : 2016-12-12
Category : Technology & Engineering
ISBN : 9813109424
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Author : Alex Lidow
Publisher :
Page : pages
File Size : 21,28 MB
Release : 2021-10
Category :
ISBN : 9780996649223
GaN Power Devices and Applications, provides an update on gallium nitride (GaN) technology and applications by leading experts. It includes detailed descriptions of the latest examples of GaN's usage in power supplies, lidar systems, motor drives, and space applications.
Author : Farid Medjdoub
Publisher : CRC Press
Page : 372 pages
File Size : 20,70 MB
Release : 2017-12-19
Category : Technology & Engineering
ISBN : 1482220040
Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Author : Alex Lidow
Publisher : John Wiley & Sons
Page : 470 pages
File Size : 38,50 MB
Release : 2019-08-12
Category : Science
ISBN : 1119594421
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Author : Joachim Piprek
Publisher : John Wiley & Sons
Page : 521 pages
File Size : 50,20 MB
Release : 2007-04-09
Category : Technology & Engineering
ISBN : 3527406670
This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
