Growth and Characterization of Polycrystalline Ge[subscript 1-x]C[subscript X] Thin Films


Book Description

Next several experiments are conducted which establish a relation between processing parameters and the material properties of the resulting films. The processing parameters explored are the dilution of the process gasses, the temperature of the substrate, the type of substrate deposited on, the incident microwave power, and the chamber pressure during deposition. The optical, structural, and electrical properties of the films are characterized by UV/VIS/NIR Spectroscopy, Raman spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy, activation energy determination, photoreflectance spectroscopy and photosensitivity. The emphasis of the work is to establish basic material knowledge of a relatively new system and how processing parameters can be used to generate the desired material properties.




Growth and Characterization of Crystalline Ge[subscript 1-x] C[subscript X] Thin Films and Devices


Book Description

The basic material, optical and electrical properties of the films were studied to build a knowledge resource on this new material. For comparison and to deepen the understanding of the nature of the alloy, pure Ge films were grown with similar parameters to the Ge[Subscript 1-x]C[Subscript x] alloy films. The films are characterized by UV/VIS/NIR Spectroscopy, Raman spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, four point probe conductivity and Hall mobility measurements. The second stage of the research was to dope the material n and p type and to determine the affect on the electrical properties. The final stage was to use the knowledge obtained from the above work to develop novel multi-layer structures that optimize the desirable material properties and to develop a 'proof of concept' diode in the crystalline Ge[Subscript 1-x]C[Subscript x] material, which was the first microelectronic device fabricated in this material.