Progress in Materials Science
Author : Subhash Mahajan
Publisher :
Page : 84 pages
File Size : 10,18 MB
Release : 1989
Category :
ISBN :
Author : Subhash Mahajan
Publisher :
Page : 84 pages
File Size : 10,18 MB
Release : 1989
Category :
ISBN :
Author : S. Mahajan
Publisher :
Page : pages
File Size : 40,85 MB
Release : 1989
Category :
ISBN :
Author : Subhash Mahajan
Publisher :
Page : 84 pages
File Size : 22,4 MB
Release : 1989
Category :
ISBN :
Author : Subhash Mahajan
Publisher :
Page : 364 pages
File Size : 41,64 MB
Release : 1989
Category : Semiconductors
ISBN :
Author : D. B. Holt
Publisher : Cambridge University Press
Page : 625 pages
File Size : 50,94 MB
Release : 2007-04-12
Category : Science
ISBN : 1139463594
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Author : A. Mesli
Publisher :
Page : pages
File Size : 30,17 MB
Release : 2000
Category :
ISBN :
Author : Kazuo Morigaki
Publisher : CRC Press
Page : 207 pages
File Size : 42,32 MB
Release : 2014-09-13
Category : Science
ISBN : 9814411493
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related mate
Author : David Redfield
Publisher : Cambridge University Press
Page : 231 pages
File Size : 25,11 MB
Release : 1996-01-26
Category : Science
ISBN : 0521461960
A thorough review of the properties of deep-level, localized defects in semiconductors.
Author : S. Ashok
Publisher : Cambridge University Press
Page : 0 pages
File Size : 13,11 MB
Release : 1998-09-14
Category : Technology & Engineering
ISBN : 9781558994164
The evolution of semiconductor devices of progressively higher performance has generally followed improved material quality with ever fewer defect concentrations. However, a shift in focus over the years has brought the realization that complete elimination of defects in semiconductors during growth and processing is neither desirable nor necessary. It is expected that the future role of defects in semiconductors will be one of control - in density, properties, spatial location, and perhaps even temporal variation during the operating lifetime of the device. This book explores the effective use of defect control at various facets of technology and widely different semiconductor materials systems. Topics include: grown-in defects in bulk crystals; doping issues; grown-in defects in thin films; doping and defect issues in wide-gap semiconductors; process-induced defects and gettering; defect properties, reactions, activation and passivation; ion implantation and irradiation effects; defects in devices and interfaces; plasma processing; defect characterization; and interfaces, quantum wells and superlattices.
Author : C.A.J. Ammerlaan
Publisher : Elsevier
Page : 518 pages
File Size : 47,19 MB
Release : 2014-01-01
Category : Technology & Engineering
ISBN : 0080983642
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.