Handbook of Range, Distributions for Energetic Ions in All Elements
Author : U. Littmark
Publisher : Pergamon
Page : 506 pages
File Size : 26,30 MB
Release : 1980
Category : Science
ISBN :
Author : U. Littmark
Publisher : Pergamon
Page : 506 pages
File Size : 26,30 MB
Release : 1980
Category : Science
ISBN :
Author : J. F. Ziegler
Publisher : Elsevier
Page : 437 pages
File Size : 23,60 MB
Release : 2013-09-11
Category : Science
ISBN : 1483148203
Stopping Cross-Sections for Energetic Ions in All Elements shows the stopping cross-sections of energetic ions in various elements in both solid and gas phase targets. The book plots chosen ion and target combinations to allow accurate linear interpolation between plots for all elemental ions and all elemental targets (atomic number 1 through 92). Existing stopping data and summaries of the experimental data are presented as well. Chapters are also devoted to electronic and nuclear stopping of ions. Physicists, researchers, physicians, nuclear scientists, radiologists, and engineers will find the book a good reference material.
Author : Dietmar Fink
Publisher : Springer Science & Business Media
Page : 410 pages
File Size : 33,23 MB
Release : 2013-03-14
Category : Technology & Engineering
ISBN : 3662073269
Presented in two parts, this first comprehensive overview addresses all aspects of energetic ion irradiation of polymers. Earlier publications and review articles concentrated on selected topics only. And the need for such a work has grown with the dramatic increase of research and applications, such as in photoresists, waveguides, and medical dosimetry, during the last decade. The first part, Fundamentals of Ion Irradiation of Polymers covers the physical, chemical and instrumental fundamentals; treats the specific irradiation mechanisms of low- and high-energy ions (including similarities and differences); and details the potential for future technological application. All the new findings are carefully analyzed and presented in a systematic way, while open questions are identified.
Author :
Publisher :
Page : 468 pages
File Size : 50,93 MB
Release : 1989
Category : Aeronautics
ISBN :
Author : D.A. Bromley
Publisher : Springer Science & Business Media
Page : 446 pages
File Size : 16,46 MB
Release : 2012-11-27
Category : Science
ISBN : 1461581036
For 75 years the stopping of energetic ions in matter has been a subject of great theoretical and experimental interest. The theoretical treatment of the stopping of ions in matter is largely due to the work of Bohr, 1-3 Bethe,4-6 Bloch,7. s and Lindhard,9-12 and it has been reviewed by Bohr,3 Fano,13 17 20 Jackson,14 Sigmund,15 Ahlen,16 and Ziegler et al. - Soon after the discovery of energetic particle emission from radioactive materials, there was interest in how these corpuscles were slowed down in traversing matter. In 1900, Marie Curie stated 21 the hypothesis that Hies rayons alpha sont des projectiles materiels susceptibles de perdre de leur vitesse en travers ant la matiere." Early attempts to evaluate this were incon clusive for there was not yet an accurate proposed model of the atom. Enough experimental evidence was collected in the next decade to make stopping power theory one of the central concerns of those attempting to develop an atomic model. J.J. Thomson, director of the prestigious Cavendish Laboratory, and Niels Bohr, a fresh postdoctoral scientist at Rutherford's Manchester Laboratory, both published almost simultaneously22. 23 an analysis of the stopping of charged particles by matter, and each contained many of their divergent ideas on the model of an atom. Thomson ignored in his paper the Rutherford alpha-particle scattering 24 experiment of a year before. But the nuclear atom with a heavy positively 25 charged core was the basis of Bohr's ideas.
Author : J.F. Ziegler
Publisher : Elsevier
Page : 509 pages
File Size : 32,50 MB
Release : 2012-12-02
Category : Science
ISBN : 0323161650
Ion Implantation Science and Technology: Second Edition, just like the first edition, serves as both an introduction and tutorial to the science, techniques, and machines involved in the subject. The book is divided into two parts - Part 1: Ion Implantation Science and Part 2: Ion Implantation Technology. Part 1 covers topics such as the stopping and range of ions in solids; ion implantation damage in silicon; experimental annealing and activation; and the measurement on ion implantation. Part 2 includes ion optics and focusing on implanter design; photoresist problems and particle contamination; ion implantation diagnostics and process control; and emission of ionizing radiation from ion implanters. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
Author : H. Ryssel
Publisher : Springer Science & Business Media
Page : 377 pages
File Size : 35,51 MB
Release : 2012-12-06
Category : Science
ISBN : 3642687792
In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech niques, held at Queen's University, ' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan tation conference for the first time. This implantation school concentra ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con trast to the first .school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given.
Author :
Publisher :
Page : 672 pages
File Size : 25,33 MB
Release : 1977
Category : Astronautics
ISBN :
Author : Hartmut Frey
Publisher : Springer Science & Business Media
Page : 385 pages
File Size : 12,67 MB
Release : 2015-05-06
Category : Technology & Engineering
ISBN : 3642054307
“Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.
Author : Dawon Kahng
Publisher : Academic Press
Page : 371 pages
File Size : 10,87 MB
Release : 2013-10-22
Category : Technology & Engineering
ISBN : 1483214788
Silicon Integrated Circuits, Part 2 covers some of the most promising approaches along with the new understanding of processing-related areas of physics and chemistry. The first chapter is about the transient thermal processing of silicon, including annealing with directed-energy beams and rapid isothermal annealing; adiabatic annealing with laser and electron beams; pulsed melting; thermal flux annealing; rapid isothermal annealing; and several applications stemming from rapid annealing and semiconductor processing with directed-energy beams. The second chapter is concerned with the use of electron cyclotron resonance plasmas in two important materials processing techniques: reactive ion-beam etching and plasma deposition. The last chapter of the book deals with the exploding area of very large scale integration processing and process simulation. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.