A Fully-Manufacturable 0.5mm SiGe BiCMOS Technology for Wireless Power Amplifier Applications


Book Description

We present for the first time a fully-manufacturable 0.5mm/3.3V SiGe BiCMOS technology that supports multiple mode (GSM/ PCS/ WCDMA) power amplifier applications, highlighting HBT device design, safe-operating area, and module performance. This technology features a high- breakdown transistor (BVCBO> 20V), with fT exceeding 25GHz, along with a suite of device elements that is fully compatible with the IBM's mature 0.5mm SiGe BiCMOS technology. PA design is discussed and hardware measurements presented demonstrating that this SiGe BiCMOS technology meets the demanding ruggedness, linearity and efficiency requirements for wireless PA applications.




Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets


Book Description

Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets is intended to designers and researchers who have to tackle the efficiency/linearity trade-off in modern RF transmitters so as to extend their battery lifetime. High data rate 3G/4G standards feature broad channel bandwidths, high dynamic range and critical envelope variations which generally forces the power amplifier (PA) to operate in a low efficiency “backed-off” regime. Classic efficiency enhancement techniques such as Envelope Elimination and Restoration reveal to be little compliant with handset-dedicated PA implementation due to their channel-bandwidth-limited behavior and their increased die area consumption and/or bill-of-material. The architectural advances that are proposed in this book circumvent these issues since they put the stress on low die-area /low power-consumption control circuitry. The advantages of silicon over III/V technologies are highlighted by several analogue signal processing techniques that can be implemented on-chip with a power amplifier. System-level and transistor-level simulations are combined to illustrate the principles of the proposed power adaptive solutions. Measurement on BICMOS demonstrators allows validating the functionality of dynamic linearity/efficiency management. In Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets, PA designers will find a review of technologies, architectures and theoretical formalisms (Volterra series...) that are traditionally related to PA design. Specific issues that one encounters in power amplifiers (such as thermal / memory effects, stability, VSWR sensitivity...) and the way of overcoming them are also extensively considered throughout this book.







Nano-Semiconductors


Book Description

With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.




Circuits and Systems for Future Generations of Wireless Communications


Book Description

The idea for this book originated from a Special Session on Circuits and Systems for Future Generations of Wireless Communications that was presented at the 2005 InternationalSymposiumon Circuits and Systems, which was then followed by two Special Issues bearing the same title that appeared in the March and April 2008 issues of the IEEE Transactions on Circuits and Systems – Part II: Express Briefs. Out of a large number of great contributions, we have selected those tting best the book format based on their quality. We would like to thank all the authors, the reviewers of the Transactions on Circuits and Systems – Part II, and the reviewers of the nal book material for their efforts in creating this manuscript. We also thank the Springer Editorial Staff for their support in putting together all the good work. We hope that this book will provide you, the reader, with new insights into Circuits and Systems for Future Generations of Wireless Communications.




Millimeter-Wave Power Amplifiers


Book Description

This book provides a detailed review of millimeter-wave power amplifiers, discussing design issues and performance limitations commonly encountered in light of the latest research. Power amplifiers, which are able to provide high levels of output power and linearity while being easily integrated with surrounding circuitry, are a crucial component in wireless microwave systems. The book is divided into three parts, the first of which introduces readers to mm-wave wireless systems and power amplifiers. In turn, the second focuses on design principles and EDA concepts, while the third discusses future trends in power amplifier research. The book provides essential information on mm-wave power amplifier theory, as well as the implementation options and technologies involved in their effective design, equipping researchers, circuit designers and practicing engineers to design, model, analyze, test and implement high-performance, spectrally clean and energy-efficient mm-wave systems.




High Efficiency Wideband Envelope Tracking Power Amplifier for Next-generation Wireless Communications


Book Description

The latest generation of smart devices deployed in cellular networks has created explosive growth in network data traffic, and the increasing demand for broadband services with higher data rates, require higher peak to average power ratio (PAPR) with wider bandwidth. One of the challenges in the conventional power amplifiers (PAs) with fixed supply voltage, is the degraded efficiency and generated heats at a large back-off to meet tight linearity requirements. This dissertation presents high efficiency wideband envelope tracking power amplifiers for 2.1 GHz micro base-stations and 2.5 GHz wireless mobile applications. By superimposing the envelope signal at the drain such that the RF amplifier operates consistently closer to saturation, the overall efficiency is improved and the generated heat is reduced dramatically. In the first part of the dissertation, a high performance BiCMOS DMOS monolithic envelope amplifier for micro-base station power amplifiers is presented. Due to the low breakdown voltage of the CMOS transistors, the high voltage envelope amplifier has been implemented with discrete components with high voltage process. Compared to these discrete solutions, an integrated circuits implementation for the envelope amplifier brings many benefits. The design of monolithic envelope amplifiers for high voltage (VDD = 15 V) envelope tracking applications, and the design techniques to solve the reliability issues with thin gate oxide is described. The overall envelope tracking system employing a GaN-HEMT RF transistor, and fully integrated high voltage envelope amplifier with a 0.35[mu]m BiCMOS DMOS process, is demonstrated. In the second part, a high-efficiency wideband envelope tracking power amplifier for mobile LTE applications will be presented. The CMOS envelope amplifier with hybrid linear and switcher is designed in a 150 nm CMOS process. The envelope amplifier employs direct sensing of the linear stage current to reduce the propagation delay in the switcher. The strategy is demonstrated to improve the efficiency of the complete envelope tracking power amplifier system. The resulting performance of envelope tracking system employing a GaAs HBT-based RF PA with a 5 MHz LTE signal input demonstrated state-of-the-art efficiency while meet the linearity requirement.




Linearization and Efficiency Enhancement Techniques for Silicon Power Amplifiers


Book Description

This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniques The architectures allowing the optimum design of multimode Si RF and mmW power amplifiers How to make designs more efficient by employing new design techniques such as linearization and efficiency improvement Layout considerations Examples of schematic, layout, simulation and measurement results Addresses the problems of high power generation, faithful construction of non-constant envelope constellations, and efficient and well control power radiation from integrated silicon chips Demonstrates how silicon technology can solve problems and trade-offs of power amplifier design, including price, size, complexity and efficiency Written and edited by the top contributors to the field




mm-Wave Silicon Power Amplifiers and Transmitters


Book Description

Build high-performance, spectrally clean, energy-efficient mm-wave power amplifiers and transmitters with this cutting-edge guide to designing, modeling, analysing, implementing and testing new mm-wave systems. Suitable for students, researchers and practicing engineers, this self-contained guide provides in-depth coverage of state-of-the-art semiconductor devices and technologies, linear and nonlinear power amplifier technologies, efficient power combining systems, circuit concepts, system architectures and system-on-a-chip realizations. The world's foremost experts from industry and academia cover all aspects of the design process, from device technologies to system architectures. Accompanied by numerous case studies highlighting practical design techniques, tradeoffs and pitfalls, this is a superb resource for those working with high-frequency systems.