Book Description

Recent developments in microelectronics technologies have created a great demand for interlayer dielectric materials with a very low dielectric constant. They will play a crucial role in the future generation of IC devices (VLSI/UISI and high speed IC packaging). Considerable efforts have been made to develop new low as well as high dielectric constant materials for applications in electronics industries. Besides achieving either low or high dielectric constants, other materials' properties such as good processability, high mechanical strength, high thermal and environmental stability, low thermal expansion, low current leakage, low moisture absorption, corrosion resistant, etc., are of equal importance. Many chemical and physical strategies have been employed to get desired dielectric materials with high performance. This is a rapidly growing field of science--both in novel materials and their applications to future packing technologies. The experimental data on inorganic and organic materials having low or high dielectric constant remail scattered in the literature. It is timely, therfore, to consolidate the current knowledge on low and high dielectric constant materials into a sigle reference source. Handbook of Low and High Dielectric Constant Materials and Their Applications is aimed at bringing together under a sigle cover (in two volumes) all low and high dielectric constant materials currently studied in academic and industrial research covering all spects of inorgani an organic materials from their synthetic chemistry, processing techniques, physics, structure-property relationship to applications in IC devices. This book will summarize the current status of the field covering important scientific developments made over the past decade with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source for all those interested in low and high dielectric constant material.