Hot-Carrier Reliability of MOS VLSI Circuits


Book Description

As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.







Hot Carrier Degradation in Semiconductor Devices


Book Description

This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.




The VLSI Handbook


Book Description

Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.







Linear CMOS RF Power Amplifiers


Book Description

The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor’s geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides different techniques and architectures that allow for optimization.




Reliability of Nanoscale Circuits and Systems


Book Description

This book is intended to give a general overview of reliability, faults, fault models, nanotechnology, nanodevices, fault-tolerant architectures and reliability evaluation techniques. Additionally, the book provides an in depth state-of-the-art research results and methods for fault tolerance as well as the methodology for designing fault-tolerant systems out of highly unreliable components.




Failure Analysis


Book Description

Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.




Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation


Book Description

This volume features the refereed proceedings of the 17th International Workshop on Power and Timing Modeling, Optimization and Simulation. Papers cover high level design, low power design techniques, low power analog circuits, statistical static timing analysis, power modeling and optimization, low power routing optimization, security and asynchronous design, low power applications, modeling and optimization, and more.