Hot-Electron Transport in Semiconductors
Author : L. Reggiani
Publisher : Springer
Page : 275 pages
File Size : 11,75 MB
Release : 2014-03-12
Category : Technology & Engineering
ISBN : 9783662309346
Author : L. Reggiani
Publisher : Springer
Page : 275 pages
File Size : 11,75 MB
Release : 2014-03-12
Category : Technology & Engineering
ISBN : 9783662309346
Author : L. Reggiani
Publisher : Springer Science & Business Media
Page : 288 pages
File Size : 22,99 MB
Release : 2006-01-20
Category : Technology & Engineering
ISBN : 3540388494
Hot-Electron Transport in Semiconductors (Topics in Applied Physics).
Author : C S Ting
Publisher : World Scientific
Page : 329 pages
File Size : 23,61 MB
Release : 1992-04-14
Category : Science
ISBN : 9814505471
This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.
Author : N. Balkan
Publisher :
Page : 536 pages
File Size : 49,73 MB
Release : 1998
Category : Science
ISBN : 9780198500582
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.
Author : S. M. Sze
Publisher :
Page : 5 pages
File Size : 45,67 MB
Release : 1966
Category : Electron transport
ISBN :
Author : Xiaolin Lei
Publisher :
Page : pages
File Size : 27,17 MB
Release : 2008
Category :
ISBN : 9789812819031
Author : Chin Sen Ting
Publisher : World Scientific
Page : 336 pages
File Size : 11,74 MB
Release : 1992
Category : Science
ISBN : 9789810210083
This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.
Author : Abdul-Azeez Sulaiman Al-Omar
Publisher :
Page : 754 pages
File Size : 40,20 MB
Release : 1988
Category : Electron transport
ISBN :
Author : B.R. Nag
Publisher : Springer Science & Business Media
Page : 476 pages
File Size : 46,47 MB
Release : 2012-12-06
Category : Science
ISBN : 3642814166
Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years. Extensive re search has been devoted to the accumulation of experimental results, par ticularly about the artificially synthesised compounds. Significant ad vances have also been made in the improvement of the related theory so that the values of the various transport coefficients may be calculated with suf ficient accuracy by taking into account all the complexities of energy band structure and electron scattering mechanisms. Knowledge about these deve lopments may, however, be gathered only from original research contributions, scattered in scientific journals and conference proceedings. Review articles have been published from time to time, but they deal with one particular material or a particular phenomenon and are written at an advanced level. Available text books on semiconductor physics, do not cover the subject in any detail since many of them were written decades ago. There is, there fore, a definite need for a book, giving a comprehensive account of electron transport in compound semiconductors and covering the introductory material as well as the current work. The present book is an attempt to fill this gap in the literature. The first chapter briefly reviews the history of the developement of compound semiconductors and their applications. It is also an introduction to the contents of the book.
Author : Dimitrije A. Tjapkin
Publisher :
Page : 8 pages
File Size : 10,72 MB
Release : 1973
Category :
ISBN :