Author : Vinod Kumar Khanna
Publisher : John Wiley & Sons
Page : 648 pages
File Size : 29,75 MB
Release : 2004-04-05
Category : Technology & Engineering
ISBN : 047166099X
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Author : B. Jayant Baliga
Publisher : William Andrew
Page : 733 pages
File Size : 11,98 MB
Release : 2015-03-06
Category : Technology & Engineering
ISBN : 1455731536
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. - Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. - Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. - The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.
Author : Cheng Shen
Publisher :
Page : 138 pages
File Size : 20,61 MB
Release : 1994
Category :
ISBN :
Author : Lin Wang
Publisher :
Page : 45 pages
File Size : 31,66 MB
Release : 1999
Category :
ISBN :
Author : Joseph A. Yedinak
Publisher :
Page : 296 pages
File Size : 45,73 MB
Release : 1997
Category : Bipolar transistors
ISBN :
Author : James Fiore
Publisher :
Page : 407 pages
File Size : 30,44 MB
Release : 2017-05-11
Category :
ISBN : 9781796543537
Across 15 chapters, Semiconductor Devices covers the theory and application of discrete semiconductor devices including various types of diodes, bipolar junction transistors, JFETs, MOSFETs and IGBTs. Applications include rectifying, clipping, clamping, switching, small signal amplifiers and followers, and class A, B and D power amplifiers. Focusing on practical aspects of analysis and design, interpretations of device data sheets are integrated throughout the chapters. Computer simulations of circuit responses are included as well. Each chapter features a set of learning objectives, numerous sample problems, and a variety of exercises designed to hone and test circuit design and analysis skills. A companion laboratory manual is available. This is the print version of the on-line OER.
Author : Jos Arrillaga
Publisher : John Wiley & Sons
Page : 324 pages
File Size : 36,14 MB
Release : 2010-01-12
Category : Technology & Engineering
ISBN : 0470682124
For very high voltage or very high current applications, the power industry still relies on thyristor-based Line Commutated Conversion (LCC), which limits the power controllability to two quadrant operation. However, the ratings of self-commutating switches such as the Insulated-Gate Bipolar Transistor (IGBT) and Integrated Gate-Commutated Thyristor (IGCT), are reaching levels that make the technology possible for very high power applications. This unique book reviews the present state and future prospects of self-commutating static power converters for applications requiring either ultra high voltages (over 600 kV) or ultra high currents (in hundreds of kA). It is an important reference for electrical engineers working in the areas of power generation, transmission and distribution, utilities, manufacturing and consulting organizations. All topics in this area are held in this one complete volume. Within these pages, expect to find thorough coverage on: modelling and control of converter dynamics; multi-level Voltage Source Conversion (VSC) and Current Source Conversion (CSC); ultra high-voltage VSC and CSC DC transmission; low voltage high DC current AC-DC conversion; industrial high current applications; power conversion for high energy storage. This text has a host of helpful material that also makes it a useful source of knowledge for final year engineering students specializing in power engineering, and those involved in postgraduate research.
Author : Kaustubh Gupta
Publisher :
Page : pages
File Size : 11,82 MB
Release : 2013
Category :
ISBN :
The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions of IGBT circuits based on device simulation and combinatorial optimization. Our method leads to the optimal IGBT layout consisting of hexagons, which is 6% more efficient in terms of performance (current per unit area) over that of squares, and up to 80% more efficient than rectangles. We also explored several techniques to reduce the time used for device simulation. In particular, we developed an accurate Verilog-A description based on the Hefner model. For transient simulation, the time used by SPICE on the Verilog-A model is only 1/10000 of that used by device simulation on the device structure. The SPICE results, though contain some inaccuracies in the details, match device simulation in the general trend. Due to the effectiveness and efficiency of our methods, we propose their application in designing better power electronic circuits and shorter turn-around time. The electronic version of this dissertation is accessible from http://hdl.handle.net/1969.1/151277
Author : Fang Lin Luo
Publisher : Elsevier
Page : 422 pages
File Size : 39,5 MB
Release : 2010-07-20
Category : Technology & Engineering
ISBN : 0080459021
The purpose of this book is to describe the theory of Digital Power Electronics and its applications. The authors apply digital control theory to power electronics in a manner thoroughly different from the traditional, analog control scheme. In order to apply digital control theory to power electronics, the authors define a number of new parameters, including the energy factor, pumping energy, stored energy, time constant, and damping time constant. These parameters differ from traditional parameters such as the power factor, power transfer efficiency, ripple factor, and total harmonic distortion. These new parameters result in the definition of new mathematical modeling: • A zero-order-hold (ZOH) is used to simulate all AC/DC rectifiers. • A first-order-hold (FOH) is used to simulate all DC/AC inverters. • A second-order-hold (SOH) is used to simulate all DC/DC converters. • A first-order-hold (FOH) is used to simulate all AC/AC (AC/DC/AC) converters. Presents most up-to-date methods of analysis and control algorithms for developing power electronic converters and power switching circuits Provides an invaluable reference for engineers designing power converters, commercial power supplies, control systems for motor drives, active filters, etc. Presents methods of analysis not available in other books
Author : B. Jayant Baliga
Publisher : Springer
Page : 1114 pages
File Size : 48,94 MB
Release : 2018-09-28
Category : Technology & Engineering
ISBN : 3319939882
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
