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Intrinsic Unipolar SiOx-based Resistive Switching Memory

Author : Yao-Feng Chang (Ph. D.)

Publisher :

Page : 284 pages

File Size : 14,59 MB

Release : 2015

Category :

ISBN :

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Book Description

Floating gate (FG) nonvolatile memory has been the main structure of nonvolatile memory devices, since its invention in 1967 by D. Kahng and S. M. Sze. They have been widely employed in the portable electronic products such as mobile phones, digital cameras, notebook computers, mp3 players and USB flash drives. However, as device size continues to shrink, the typical flash memory device will continue to suffer from issues of retention and endurance. In order to solve the problems, researchers have considered new storage layers and novel structures in nonvolatile memory devices to replace the conventional floating gate device. Therefore, a great deal of potential memory structures have been proposed, with some transferring into a production line, such as phase change memory (PCM), magnetic random access memory (MRAM) and ferroelectric random access memory (FeRAM). In the innovation of memory devices, resistance random access memories (ReRAMs) have gained significant research interest as an alternative for next-generation nonvolatile memory due to its high density, low cost, low power consumption, fast switching speed and simple cell structure. In this dissertation, the intrinsic unipolar silicon oxide (SiOx-based) Resistive-RAM (ReRAM) characterization, mechanism and applications have been presented. I investigate device structures, material compositions and electrical characteristics to realize ReRAM cells with high ON/OFF ratio, low static power consumption, low switching power, and high readout-margin using complementary metal-oxide-semiconductor (CMOS) compatible SiOx-based materials. These ideas are combined with the use of horizontal and vertical device structure designs, composition optimization, electrical controlling and external factors for understanding resistive switching mechanism. Modeling of resistive switching mechanism, including temperature effect, pulse response and carrier transport behaviors are performed, to develop a compact model in energy diagram, trap-level information in SiOx resistive switching layer, even for computer-aided design (CAD) in very-large-scale integration (VLSI) design. Finally, synapse-based neuromorphic system is demonstrated in SiOx-based ReRAM, combining with bio-inspiration and biomimetics process illustrations. This work presents the comprehensively investigation of SiOx-based resistive switching characteristics, mechanisms, applications for future post-CMOS devices era.



Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices

Author : Joao B. Sousa

Publisher : William Andrew

Page : 485 pages

File Size : 11,1 MB

Release : 2021-03-23

Category : Science

ISBN : 0323461247

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Book Description

Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices offers a pragmatic view on transport phenomena for micro- and nanoscale materials and devices, both as a research tool and as a means to implant new functions in materials. Chapters emphasize transport properties (TP) as a research tool at the micro/nano level and give an experimental view on underlying techniques. The relevance of TP is highlighted through the interplay between a micro/nanocarrier's characteristics and media characteristics: long/short-range order and disorder excitations, couplings, and in energy conversions. Later sections contain case studies on the role of transport properties in functional nanomaterials. This includes transport in thin films and nanostructures, from nanogranular films, to graphene and 2D semiconductors and spintronics, and from read heads, MRAMs and sensors, to nano-oscillators and energy conversion, from figures of merit, micro-coolers and micro-heaters, to spincaloritronics. - Presents a pragmatic description of electrical transport phenomena in micro- and nanoscale materials and devices from an experimental viewpoint - Provides an in-depth overview of the experimental techniques available to measure transport phenomena in micro- and nanoscale materials - Features case studies to illustrate how each technique works - Highlights emerging areas of interest in micro- and nanomaterial transport phenomena, including spintronics





Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory

Author : Cheng-Chih Hsieh

Publisher :

Page : pages

File Size : 12,95 MB

Release : 2018

Category : Computers

ISBN :

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Book Description

In this chapter, we focus on the recent process on memcomputing (memristor + computing) in intrinsic SiOx-based resistive switching memory (ReRAM or called memristor). In the first section of the chapter, we investigate neuromorphic computing by mimicking the synaptic behaviors in integrating one-diode and one-resistive switching element (1D-1R) architecture. The power consumption can be minimized further in synaptic functions because sneak-path current has been suppressed and the capability for spike-induced synaptic behaviors has been demonstrated, representing critical milestones and achievements for the application of conventional SiOx-based materials in future advanced neuromorphic computing. In the next section of chapter, we will discuss an implementation technique of implication operations for logic-in-memory computation by using a SiOx-based memristor. The implication function and its truth table have been implemented with the unipolar or nonpolar operation scheme. Furthermore, a circuit with 1D-1R architecture with a 4 × 4 crossbar array has been demonstrated, which realizes the functionality of a one-bit full adder as same as CMOS logic circuits with lower design area requirement. This chapter suggests that a simple, robust approach to realize memcomputing chips is quite compatible with large-scale CMOS manufacturing technology by using an intrinsic SiOx-based memristor.



Nano Devices and Sensors

Author : Juin J. Liou

Publisher : Walter de Gruyter GmbH & Co KG

Page : 228 pages

File Size : 17,43 MB

Release : 2016-04-25

Category : Technology & Engineering

ISBN : 1501501534

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Book Description

The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies. The scope of the conference includes the following topics: A. Green Electronics B. Microelectronic Circuits and Systems C. Integrated Circuits and Packaging Technologies D. Computer and Communication Engineering E. Electron Devices F. Optoelectronic and Semiconductor Technologies The technical program consisted of 4 plenary talks, 23 invited talks, and more than 250 contributed oral and poster presentations. Plenary speakers were recognized experts in their fields, and their talks focused on leading-edge technologies including: "The Future Lithographic Technology for Semiconductor Fabrication" by Dr. Alek C. Chen, Asia ASML, Taiwan. "Detection of Single Traps and Characterization of Individual Traps: Beginning of Atomistic Reliability Physics" by Prof. Toshiaki Tsuchiya, Shimane University, Japan. "The Art and Science of Packaging High-Coupling Photonics Devices and Modules", by Prof. Wood-Hi Cheng, National Chung-Hsing University, Taiwan. "Prospect and Outlook of Electrostatic Discharge (ESD) Protection in Emerging Technologies", by Prof. Juin J. Liou, University of Central Florida, USA. After a rigorous review process, the ISNE 2015 technical program committee has selected 10 outstanding presentations and invited the authors to prepare extended chapters for inclusion in this edited book. Of the 10 chapters, five are focused on the subject of electronic devices, and the other covers the circuit designs for various applications. The authors are working at the academia in Austria, United States, Korea, and Taiwan. The guest editors would like to take this opportunity to express our sincere gratitude to all the members of the ISNE 2015 technical program committees for reviewing the papers and selecting the manuscripts for the edited book. We also thank all the authors for their valuable and excellent contributions to the book.



Emerging Memory and Computing Devices in the Era of Intelligent Machines

Author : Pedram Khalili Amiri

Publisher : MDPI

Page : 276 pages

File Size : 33,22 MB

Release : 2020-04-16

Category : Technology & Engineering

ISBN : 3039285025

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Book Description

Computing systems are undergoing a transformation from logic-centric towards memory-centric architectures, where overall performance and energy efficiency at the system level are determined by the density, performance, functionality and efficiency of the memory, rather than the logic sub-system. This is driven by the requirements of data-intensive applications in artificial intelligence, autonomous systems, and edge computing. We are at an exciting time in the semiconductor industry where several innovative device and technology concepts are being developed to respond to these demands, and capture shares of the fast growing market for AI-related hardware. This special issue is devoted to highlighting, discussing and presenting the latest advancements in this area, drawing on the best work on emerging memory devices including magnetic, resistive, phase change, and other types of memory. The special issue is interested in work that presents concepts, ideas, and recent progress ranging from materials, to memory devices, physics of switching mechanisms, circuits, and system applications, as well as progress in modeling and design tools. Contributions that bridge across several of these layers are especially encouraged.



Emerging Computing: From Devices to Systems

Author : Mohamed M. Sabry Aly

Publisher : Springer Nature

Page : 446 pages

File Size : 45,65 MB

Release : 2022-07-11

Category : Technology & Engineering

ISBN : 9811674876

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Book Description

The book covers a range of topics dealing with emerging computing technologies which are being developed in response to challenges faced due to scaling CMOS technologies. It provides a sneak peek into the capabilities unleashed by these technologies across the complete system stack, with contributions by experts discussing device technology, circuit, architecture and design automation flows. Presenting a gradual progression of the individual sub-domains and the open research and adoption challenges, this book will be of interest to industry and academic researchers, technocrats and policymakers. Chapters "Innovative Memory Architectures Using Functionality Enhanced Devices" and "Intelligent Edge Biomedical Sensors in the Internet of Things (IoT) Era" are available open access under a Creative Commons Attribution 4.0 International License via link.springer.com.



Memristor and Memristive Neural Networks

Author : Alex James

Publisher : BoD – Books on Demand

Page : 326 pages

File Size : 39,48 MB

Release : 2018-04-04

Category : Computers

ISBN : 9535139479

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Book Description

This book covers a range of models, circuits and systems built with memristor devices and networks in applications to neural networks. It is divided into three parts: (1) Devices, (2) Models and (3) Applications. The resistive switching property is an important aspect of the memristors, and there are several designs of this discussed in this book, such as in metal oxide/organic semiconductor nonvolatile memories, nanoscale switching and degradation of resistive random access memory and graphene oxide-based memristor. The modelling of the memristors is required to ensure that the devices can be put to use and improve emerging application. In this book, various memristor models are discussed, from a mathematical framework to implementations in SPICE and verilog, that will be useful for the practitioners and researchers to get a grounding on the topic. The applications of the memristor models in various neuromorphic networks are discussed covering various neural network models, implementations in A/D converter and hierarchical temporal memories.



Memristor

Author : Yao-Feng Chang

Publisher : BoD – Books on Demand

Page : 180 pages

File Size : 28,25 MB

Release : 2021-11-17

Category : Technology & Engineering

ISBN : 1839689560

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Book Description

This book provides a platform for interdisciplinary research into unconventional computing with emerging physical substrates. With a focus on memristor devices, the chapter authors discuss a wide range of topics, including memristor theory, mathematical modelling, circuit theory, memristor-mate, memristor security, artificial intelligence, and much more.



Process Integration and Logic Applications of SiOx Based Resistive Memory

Author : Fei Zhou

Publisher :

Page : 262 pages

File Size : 18,25 MB

Release : 2015

Category :

ISBN :

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Book Description

Flash memory has been the fastest growing non-volatile memory technology, and it has been widely used in many portable electronic products. Due to its charge based memory mechanism, there are more and more challenges scaling down the flash memory device. Researchers have been looking for new memory materials and novel structures for non-volatile memory devices to replace the conventional floating gate flash. Resistive switching memory stands out from other leading contenders such as phase change memory, magnetic random access memory, and spintronic random access memory. Resistive switching memory has the advantages of non-charge based memory mechanism, simple two-terminal device structure, and fast switching speed. Therefore, it demonstrates great potential for replacing NAND flash and even DRAM to become the next-generation non-volatile memory. A comprehensive investigation on amorphous silicon oxide (SiOx) based resistive memory, starting from fabrication and material analysis, to performance optimization, then to advanced characterization, and finally ending with novel logic circuit applications, have been presented in this dissertation. New device structure and encapsulation process are developed to enable SiOx based resistive memory to operate in air ambient. External resistance effect and substrate optimization have been made to achieve good switching window, low endurance variation. Current sweep technique was used to study the Set process, which simplified multiple resistance level operation of SiOx based resistive memory. Characterization of resistive switching behavior at elevated temperature showed that SiOx resistive material has great potential for high temperature memory applications. Random Telegraph Noise and Energetic Dispersive Spectroscopy provided insights into the physical model of the resistive switching phenomenon. Finally, bidirectional implication scheme using SiOx based resistive memory was proposed and tested, which forms the corner stone of memristor based logic operations. Taking one step further, one bit full adder logic function was theoretically realized on a logic circuit consisting of 4 × 4 crossbar structure resistive memory 1D-1R array and select transistors, the findings show pros and cons of memory enabled logic circuit. In summary, this work presents the optimization and application researches on SiOx based resistive switching memory.