Book Description

The exploding market of information technology requires ultrahigh-speed integrated circuits, which imposes formidable challenges in terms of nanofabrication, advanced materials, atomic-scale measurements and modeling. The enormous costs of next-generation lithographic machines to mass produce integrated circuits with sub-100nm resolution justify alternative approaches where the use of advanced materials and techniques for nanofabrication, including epitaxial growth and their powerful modeling, can lead to more cost-effective strategies. This book contains the proceedings of two symposia held at the 1999 MRS Fall Meeting in Boston that address these issues - Advanced Materials and Techniques for Nanolithography, and Atomic-Scale Measurements and Atomistic Models of Epitaxial Growth and Lithography. The reader will find an overview of the state of the art, both theoretical and experimental in this technologically important field. Topics include: advanced techniques for sub-100nm resolution lithography and molecular electronics; epitaxial growth and morphology; novel concepts of resists for nanolithography; atomic-scale characterization and measurement; modeling and atomistic simulations; and nanodevices and nanostructures.