Materials Reliability in Microelectronics III: Volume 309


Book Description

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.







Materials Reliability in Microelectronics III:


Book Description

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.




Materials Reliability in Microelectronics VI: Volume 428


Book Description

MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.




Electromigration in Metals


Book Description

Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.







Materials Aspects of X-Ray Lithography: Volume 306


Book Description

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.




Biomolecular Materials by Design: Volume 330


Book Description

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.







Ferroelectric Thin Films III: Volume 310


Book Description

Papers of the symposium held April 13-16, 1993 in San Francisco, Calif., on: novel analysis techniques to characterize materials and device properties, process integration, degradation and modelling, CVD, spin pyrolysis, niobium and barium based ferroelectrics, materials and processes, sputter deposition, pulsed laser and other deposition techniques. Annotation copyright by Book News, Inc., Portland, OR