Materials Reliability Issues in Microelectronics


Book Description

Proceedings of the "MRS Symposium on Materials Reliability Issues in Microelectronics"--Dedication, p. xiii.




Materials Reliability Issues in Microelectronics: Volume 225


Book Description

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.




Reliability and Failure of Electronic Materials and Devices


Book Description

Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites







Materials Reliability in Microelectronics V: Volume 391


Book Description

This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.




Materials Reliability in Microelectronics II: Volume 265


Book Description

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.




Materials Reliability in Microelectronics VII: Volume 473


Book Description

The inexorable drive for increased integrated circuit functionality and performance places growing demands on the metal and dielectric thin films used in fabricating these circuits, as well as spurring demand for new materials applications and processes. This book directly addresses issues of widespread concern in the microelectronics industry - smaller feature sizes, new materials and new applications that challenge the reliability of new technologies. While the book continues the focus on issues related to interconnect reliability, such as electromigration and stress, particular emphasis is placed on the effects of microstructure. An underlying theme is understanding the importance of interactions among different materials and associated interfaces comprising a single structure with dimensions near or below the micrometer scale. Topics include: adhesion and fracture; gate oxide growth and oxide interfaces; surface preparation and gate oxide reliability; oxide degradation and defects; micro-structure, texture and reliability; novel measurement techniques; interconnect performance and reliability modeling; electromigration and interconnect reliability and stress and stress relaxation.




Microelectronics to Nanoelectronics


Book Description

Composed of contributions from top experts, Microelectronics to Nanoelectronics: Materials, Devices and Manufacturability offers a detailed overview of important recent scientific and technological developments in the rapidly evolving nanoelectronics arena. Under the editorial guidance and technical expertise of noted materials scientist Anupama B. Kaul of California Institute of Technology’s Jet Propulsion Lab, this book captures the ascent of microelectronics into the nanoscale realm. It addresses a wide variety of important scientific and technological issues in nanoelectronics research and development. The book also showcases some key application areas of micro-electro-mechanical-systems (MEMS) that have reached the commercial realm. Capitalizing on Dr. Kaul’s considerable technical experience with micro- and nanotechnologies and her extensive research in prestigious academic and industrial labs, the book offers a fresh perspective on application-driven research in micro- and nanoelectronics, including MEMS. Chapters explore how rapid developments in this area are transitioning from the lab to the market, where new and exciting materials, devices, and manufacturing technologies are revolutionizing the electronics industry. Although many micro- and nanotechnologies still face major scientific and technological challenges and remain within the realm of academic research labs, rapid advances in this area have led to the recent emergence of new applications and markets. This handbook encapsulates that exciting recent progress by providing high-quality content contributed by international experts from academia, leading industrial institutions—such as Hewlett-Packard—and government laboratories including the U.S. Department of Energy’s Sandia National Laboratory. Offering something for everyone, from students to scientists to entrepreneurs, this book showcases the broad spectrum of cutting-edge technologies that show significant promise for electronics and related applications in which nanotechnology plays a key role.




Reliability of Organic Compounds in Microelectronics and Optoelectronics


Book Description

This book aims to provide a comprehensive reference into the critical subject of failure and degradation in organic materials, used in optoelectronics and microelectronics systems and devices. Readers in different industrial sectors, including microelectronics, automotive, lighting, oil/gas, and petrochemical will benefit from this book. Several case studies and examples are discussed, which readers will find useful to assess and mitigate similar failure cases. More importantly, this book presents methodologies and useful approaches in analyzing a failure and in relating a failure to the reliability of materials and systems.




Materials Reliability in Microelectronics VI: Volume 428


Book Description

MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.