Mechanisms Involved in the Glow-discharge Deposition of Doped Hydrogenated Amorphous Silicon
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Page : 5 pages
File Size : 31,61 MB
Release : 1984
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Page : 5 pages
File Size : 31,61 MB
Release : 1984
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Page : 886 pages
File Size : 35,91 MB
Release : 1992
Category : Power resources
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Page : 180 pages
File Size : 15,1 MB
Release : 1986
Category : Photovoltaic power generation
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Page : 256 pages
File Size : 24,37 MB
Release : 1991
Category : Aeronautics
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Page : pages
File Size : 50,45 MB
Release : 1982
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The use of film deposition monitors to rapidly and accurately measure a-Si:H deposition at various surfaces of the discharge is reported. Deposition rates have been measured in-situ within a few minutes, and many different discharge conditions can be probed in a short time. The frequency shift of quartz crystals was used for monitoring thickness. The method used and results obtained are reported. The ratio of deposited silicon atoms to depleted SiH4 molecules is plotted vs. the discharge power to flow ratio. (LEW).
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Publisher : Academic Press
Page : 321 pages
File Size : 20,50 MB
Release : 1997-05-23
Category : Technology & Engineering
ISBN : 0080864422
Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical and physico-chemical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
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Page : 1296 pages
File Size : 46,79 MB
Release : 1984
Category : Research
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Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.
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Page : 680 pages
File Size : 18,44 MB
Release : 1984
Category : Solar energy
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Page : 1028 pages
File Size : 23,1 MB
Release : 1983
Category : Power resources
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Page : 946 pages
File Size : 30,50 MB
Release : 1996
Category : Amorphous semiconductors
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