Metallization and Metal-Semiconductor Interfaces


Book Description

This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.




Metal-Semiconductor Schottky Barrier Junctions and Their Applications


Book Description

The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.




Electronic Structure of Metal-Semiconductor Contacts


Book Description

Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-




Final Report for Contract N00014-89-J-1157 (University of Illinois).


Book Description

We perform both first-principle and empirical tight-binding calculations on the band structures of metal-metal and metal-semiconductor superlattices. The materials of interest include superlattices made of transition-metals (Fe, Co)/Cu, Fe/Cr), rare earths (GD/Y, DY/Y, Er/Y) and semimetal-semiconductor combinations (Er, Gd)As/(Al, Ga)As). The conduction electron mediated indirect exchange interaction (RKKY interaction) between magnetic atoms in these superlattices is calculated. The transport properties of these superlattices have also been studied.




Scientific and Technical Aerospace Reports


Book Description

Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.




Specialty Metal Provision and the Berry Amendment


Book Description

In order to protect the U.S. industrial base during periods of adversity and war, Congress passed a set of domestic source restrictions which became known as the Berry Amend. Specialty metal (SM) represented one of 14 items previously covered under the Berry Amend. The range of SM include steel, metal alloys, titanium and titanium alloys, and zirconium and zirconium base alloys. Thousands of products used for defense, aerospace, auto, and renewable energy technologies rely on SM for which there are often few, if any, substitutes. Contents of this report: Definition of SM; SM and Rare Earth Metals; History of Revisions to Existing SM Rules; Annual Industrial Capabilities Report; Strategic Materials Protection Board. A print on demand pub.







Semiconductors and Semimetals


Book Description

Semiconductors and Semimetals