Rapid Thermal and Other Short-time Processing Technologies II


Book Description

"Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."




Flash Lamp Annealing


Book Description

This book provides a comprehensive survey of the technology of flash lamp annealing (FLA) for thermal processing of semiconductors. It gives a detailed introduction to the FLA technology and its physical background. Advantages, drawbacks and process issues are addressed in detail and allow the reader to properly plan and perform their own thermal processing. Moreover, this books gives a broad overview of the applications of flash lamp annealing, including a comprehensive literature survey. Several case studies of simulated temperature profiles in real material systems give the reader the necessary insight into the underlying physics and simulations. This book is a valuable reference work for both novice and advanced users.







Rapid Thermal and Other Short-time Processing Technologies


Book Description

The proceedings from this May 2000 symposium illustrate the range of applications in Rapid Thermal Processing (RTP). The refereed papers cover a variety of issues, such as ultra-shallow junctions; contacts for nanoscale CMOS; gate stacks; new applications of RTP, such as for the enhanced crystalization of amorphous silicon thin films; and advances on RTP systems and process monitoring, including optimizing and controlling gas flows in an RTCVD reactor. Most presentations are supported by charts and other graphical data. c. Book News Inc.




Advances in Microwave and Radio Frequency Processing


Book Description

Prometheus brought fire to mankind Arthur R. von Hippel “Dielectrics and Waves”, 1954 Our contribution? There are only few areas of research and development of a comparable scientific and technological extension as microwave and high frequency processing. “Pr- essing” means not only application of radiation of 300 MHz to 300 GHz f- quency to synthesis, heating or ionisation of matter but also generation, transm- sion and detection of microwave and radio frequency radiation. Microwave and high frequency sources positioned in the orbit are the foun- tion of modern satellite telecommunication systems, gyrotron tubes being pr- ently developed in different countries all over the world will most probably be the major devices to open up a new era of energy supply to mankind be means of - sion plasma. Although initiated by military purposes during the Second World War (RADAR, Radio Detection and Ranging), microwave and high frequency utilisation has spread over almost every important aspect of normal day life since than, from individual mobile phones and kitchen microwave ovens to industrial food processing, production of composites as sustainable building materials, green chemistry, medical applications and finally infrastructure installations like GPS and Galileo, to name only few examples. These different areas of microwave and high frequency radiation application can not be unified within one group of scientists and technologists. There are s- eral distinguished communities active e.g., in the area of telecommunication s- tems, strong microwaves for fusion plasma or plasma based materials processing.




Physical Chemistry of Semiconductor Materials and Processes


Book Description

The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.




Chemistry of Semiconductors


Book Description

Silicon, germanium, and compound semiconductors, among which silicon carbide, gallium arsenide and gallium nitride are the most representative examples, play a withstanding role in the world economy, since they were and still are the keys for the advancement of modern microelectronics and optoelectronics, with a wealth of sister technologies relevant for renewable energy solutions and advanced spectroscopy applications. This textbook will cover the synthesis, spectroscopic characterisation and optimisation of semiconductor materials, accounting for the most recent developments in the field of nanomaterials. It will be of great interest for scholars and instructors to have the chance to look at semiconductor science with a basic chemical approach. Homopolar semiconductors (silicon and germanium) are examined first, considering the role of these materials in modern microelectronics and in photovoltaics. Compound semiconductors (for example, carbides, arsenides, tellurides, nitrides) are also discussed in detail, considering that the chemistry of their preparation is even more critical and their role in photonic applications is strategic. Authored by a leading expert in the field, this easily accessible text is appropriate for advanced undergraduates and postgraduates studying materials science and technology.




Silicon Front-end Junction Formation Technologies


Book Description

Unlike the previous three volumes in the series on silicon front-end processing, this volume expands its focus to include more topics related to formation of ultrashallow junctions. With the challenges presented by the requirements of the sub- 100nm node, the need for new activation technologies which yield minimal diffusion of the dopant while producing high activation are paramount. In addition, the metrology required to measure these shallow profiles in both one and two dimensions becomes more critical. The volume attempts to address these new requirements and potential solutions by covering a variety of topics that include: alternate annealing technologies; device engineering options; dopant activation; epitaxial techniques primarily employing SiGe; defect and diffusion models; characterization using surface analysis techniques; and characterization technologies.