Miniaturized Transistors


Book Description

What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.




Miniaturization Technologies


Book Description




Handbook for III-V High Electron Mobility Transistor Technologies


Book Description

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots




Carbon for Micro and Nano Devices


Book Description

Micro and nano devices are an integral part of modern technology. To address the requirements of the state-of-the-art technology, topics are selected from both chip-based and flexible electronics. A wide range of carbon materials including graphene, carbon nanotube, glass-like carbon, porous carbon, carbon black, graphite, carbon nanofiber, laser-patterned carbon and heteroatom containing carbon are covered. This goal is to elucidate fundamental carbon material science along with compatible micro- and nanofabrication techniques. Real-life example of sensors, energy storage and generation devices, MEMS, NEMS and implantable bioelectronics enable visualization of the outcome of described processes. Students will also benefit from the attractive aspects of carbon science explained in simple terms. Hybridization, allotrope classification and microstructural models are presented with a whole new outlook. Discussions on less-studied, hypothetical and undiscovered carbon forms render the contents futuristic and highly appealing.




Introduction to Information Systems


Book Description

Introduction to Information Systems, 9th Edition teaches undergraduate business majors how to use information technology to master their current or future jobs. Students develop a working understanding of information systems and information technology and learn how to apply concepts to successfully facilitate business processes. This course demonstrates that IT is the backbone of any business, whether a student is majoring in accounting, finance, marketing, human resources, production/operations management, or MIS.




Cooperation Networks and Economic Development


Book Description

For most Western audiences, Cuba is a touristic paradise stuck in time and virtually detached from world technology networks by the US embargo – anything but a hub of industrial innovation and high value-added biotechnology. However, a closer look reveals more subtle but equally powerful stories that challenge the homogenizing assumptions of conventional economics and open up scope for more sophisticated reflections on Cuban economy and industry. From this kind of enquiry emerges the case of the internationally respected Cuban biotech industry as the most successful case of science and technology policy in the country’s economic history. The book takes an interdisciplinary approach, exploring issues such as interdependency, purpose and history as natural constituencies of the innovation process. It also examines the dynamic and crucial role played by the state in the formation of innovative business enterprises. This book will be of interest to academic researchers in the fields of innovation and economic development.




Photon Counting


Book Description

Photon counting is a unified name for the techniques using single-photon detection for accumulative measurements of the light flux, normally occurring under extremely low-light conditions. Nowadays, this approach can be applied to the wide variety of the radiation wavelengths, starting from X-ray and deep ultraviolet transitions and ending with far-infrared part of the spectrum. As a special tribute to the photon counting, the studies of cosmic microwave background radiation in astronomy, the experiments with muon detection, and the large-scale fundamental experiments on the nature of matter should be noted. The book provides readers with an overview on the fundamentals and state-of-the-art applications of photon counting technique in the applied science and everyday life.




High Mobility and Quantum Well Transistors


Book Description

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.







Occupational Outlook Handbook


Book Description

Describes 250 occupations which cover approximately 107 million jobs.