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Modeling of Electrical Overstress in Integrated Circuits

Author : Carlos H. Diaz

Publisher : Springer Science & Business Media

Page : 165 pages

File Size : 33,42 MB

Release : 2012-12-06

Category : Technology & Engineering

ISBN : 1461527880

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Book Description

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields.



Electrical Overstress (EOS)

Author : Steven H. Voldman

Publisher : John Wiley & Sons

Page : 368 pages

File Size : 12,71 MB

Release : 2013-08-27

Category : Technology & Engineering

ISBN : 1118703332

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Book Description

Electrical Overstress (EOS) continues to impact semiconductor manufacturing, semiconductor components and systems as technologies scale from micro- to nano-electronics. This bookteaches the fundamentals of electrical overstress and how to minimize and mitigate EOS failures. The text provides a clear picture of EOS phenomena, EOS origins, EOS sources, EOS physics, EOS failure mechanisms, and EOS on-chip and system design. It provides an illuminating insight into the sources of EOS in manufacturing, integration of on-chip, and system level EOS protection networks, followed by examples in specific technologies, circuits, and chips. The book is unique in covering the EOS manufacturing issues from on-chip design and electronic design automation to factory-level EOS program management in today’s modern world. Look inside for extensive coverage on: Fundamentals of electrical overstress, from EOS physics, EOS time scales, safe operating area (SOA), to physical models for EOS phenomena EOS sources in today’s semiconductor manufacturing environment, and EOS program management, handling and EOS auditing processing to avoid EOS failures EOS failures in both semiconductor devices, circuits and system Discussion of how to distinguish between EOS events, and electrostatic discharge (ESD) events (e.g. such as human body model (HBM), charged device model (CDM), cable discharge events (CDM), charged board events (CBE), to system level IEC 61000-4-2 test events) EOS protection on-chip design practices and how they differ from ESD protection networks and solutions Discussion of EOS system level concerns in printed circuit boards (PCB), and manufacturing equipment Examples of EOS issues in state-of-the-art digital, analog and power technologies including CMOS, LDMOS, and BCD EOS design rule checking (DRC), LVS, and ERC electronic design automation (EDA) and how it is distinct from ESD EDA systems EOS testing and qualification techniques, and Practical off-chip ESD protection and system level solutions to provide more robust systems Electrical Overstress (EOS): Devices, Circuits and Systems is a continuation of the author’s series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the nano-electronic era.



ESD in Silicon Integrated Circuits

Author : E. Ajith Amerasekera

Publisher : John Wiley & Sons

Page : 434 pages

File Size : 14,87 MB

Release : 2002-05-22

Category : Technology & Engineering

ISBN :

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Book Description

* Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.



Electrothermal Analysis of VLSI Systems

Author : Yi-Kan Cheng

Publisher : Springer Science & Business Media

Page : 220 pages

File Size : 37,34 MB

Release : 2005-12-01

Category : Technology & Engineering

ISBN : 0306470241

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Book Description

This useful book addresses electrothermal problems in modern VLSI systems. It discusses electrothermal phenomena and the fundamental building blocks that electrothermal simulation requires. The authors present three important applications of VLSI electrothermal analysis: temperature-dependent electromigration diagnosis, cell-level thermal placement, and temperature-driven power and timing analysis.



ESD

Author : Steven H. Voldman

Publisher : John Wiley & Sons

Page : 565 pages

File Size : 47,66 MB

Release : 2015-06-22

Category : Technology & Engineering

ISBN : 1118954467

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Book Description

ESD: Circuits and Devices 2nd Edition provides a clear picture of layout and design of digital, analog, radio frequency (RF) and power applications for protection from electrostatic discharge (ESD), electrical overstress (EOS), and latchup phenomena from a generalist perspective and design synthesis practices providing optimum solutions in advanced technologies. New features in the 2nd edition: Expanded treatment of ESD and analog design of passive devices of resistors, capacitors, inductors, and active devices of diodes, bipolar junction transistors, MOSFETs, and FINFETs. Increased focus on ESD power clamps for power rails for CMOS, Bipolar, and BiCMOS. Co-synthesizing of semiconductor chip architecture and floor planning with ESD design practices for analog, and mixed signal applications Illustrates the influence of analog design practices on ESD design circuitry, from integration, synthesis and layout, to symmetry, matching, inter-digitation, and common centroid techniques. Increased emphasis on system-level testing conforming to IEC 61000-4-2 and IEC 61000-4-5. Improved coverage of low-capacitance ESD, scaling of devices and oxide scaling challenges. ESD: Circuits and Devices 2nd Edition is an essential reference to ESD, circuit & semiconductor engineers and quality, reliability &analysis engineers. It is also useful for graduate and undergraduate students in electrical engineering, semiconductor sciences, microelectronics and IC design.



Transient-Induced Latchup in CMOS Integrated Circuits

Author : Ming-Dou Ker

Publisher : John Wiley & Sons

Page : 265 pages

File Size : 48,98 MB

Release : 2009-07-23

Category : Technology & Engineering

ISBN : 0470824085

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Book Description

The book all semiconductor device engineers must read to gain a practical feel for latchup-induced failure to produce lower-cost and higher-density chips. Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the critical issues that have resurfaced for CMOS technologies. Once readers can gain an understanding of the standard practices for TLU, Ker and Hsu discuss the physical mechanism of TLU under a system-level ESD test, while introducing an efficient component-level TLU measurement setup. The authors then present experimental methodologies to extract safe and area-efficient compact layout rules for latchup prevention, including layout rules for I/O cells, internal circuits, and between I/O and internal circuits. The book concludes with an appendix giving a practical example of extracting layout rules and guidelines for latchup prevention in a 0.18-micrometer 1.8V/3.3V silicided CMOS process. Presents real cases and solutions that occur in commercial CMOS IC chips Equips engineers with the skills to conserve chip layout area and decrease time-to-market Written by experts with real-world experience in circuit design and failure analysis Distilled from numerous courses taught by the authors in IC design houses worldwide The only book to introduce TLU under system-level ESD and EFT tests This book is essential for practicing engineers involved in IC design, IC design management, system and application design, reliability, and failure analysis. Undergraduate and postgraduate students, specializing in CMOS circuit design and layout, will find this book to be a valuable introduction to real-world industry problems and a key reference during the course of their careers.



Computational Intelligence in Analog and Mixed-Signal (AMS) and Radio-Frequency (RF) Circuit Design

Author : Mourad Fakhfakh

Publisher : Springer

Page : 500 pages

File Size : 45,55 MB

Release : 2015-07-14

Category : Computers

ISBN : 3319198726

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Book Description

This book explains the application of recent advances in computational intelligence – algorithms, design methodologies, and synthesis techniques – to the design of integrated circuits and systems. It highlights new biasing and sizing approaches and optimization techniques and their application to the design of high-performance digital, VLSI, radio-frequency, and mixed-signal circuits and systems. This first of two related volumes addresses the design of analog and mixed-signal (AMS) and radio-frequency (RF) circuits, with 17 chapters grouped into parts on analog and mixed-signal applications, and radio-frequency design. It will be of interest to practitioners and researchers in computer science and electronics engineering engaged with the design of electronic circuits.



The ESD Handbook

Author : Steven H. Voldman

Publisher : John Wiley & Sons

Page : 1168 pages

File Size : 25,8 MB

Release : 2021-03-02

Category : Technology & Engineering

ISBN : 1119233100

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Book Description

A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings. The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies. Contains a well-organized reference that provides a quick review on a range of ESD topics Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications Offers information in clear and accessible terms Written by the accomplished author of the popular ESD book series Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.



ESD Protection Methodologies

Author : Marise Bafleur

Publisher : Elsevier

Page : 286 pages

File Size : 27,36 MB

Release : 2017-07-26

Category : Technology & Engineering

ISBN : 0081011601

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Book Description

Failures caused by electrostatic discharges (ESD) constitute a major problem concerning the reliability and robustness of integrated circuits and electronic systems. This book summarizes the many diverse methodologies aimed at ESD protection and shows, through a number of concrete studies, that the best approach in terms of robustness and cost-effectiveness consists of implementing a global strategy of ESD protection. ESD Protection Methodologies begins by exploring the various normalized test techniques that are used to qualify ESD robustness as well as characterization and defect localization methods aimed at implementing corrective measures. Due to the increasing complexity of integrated circuits, it is important to be able to provide a simulation in which the implemented ESD protection strategy provides the desired protection, while not harming the performance levels of the circuit. Therefore, the main features and difficulties related to the different types of simulation, finite element, SPICE-type and behavioral, are then studied. To conclude, several case studies are presented which provide real-life examples of the approaches explained in the previous chapters and validate a number of the strategies from component to system level. - Provides a global ESD protection approach from component to system, including both the proposal of investigation techniques and predictive simulation methodologies - Addresses circuit and system designers as well as failure analysis engineers - Provides the description of specifically developed investigation techniques and the application of the proposed methodologies to real case studies



ESD Testing

Author : Steven H. Voldman

Publisher : John Wiley & Sons

Page : 328 pages

File Size : 33,55 MB

Release : 2016-10-07

Category : Technology & Engineering

ISBN : 1118707141

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Book Description

With the evolution of semiconductor technology and global diversification of the semiconductor business, testing of semiconductor devices to systems for electrostatic discharge (ESD) and electrical overstress (EOS) has increased in importance. ESD Testing: From Components to Systems updates the reader in the new tests, test models, and techniques in the characterization of semiconductor components for ESD, EOS, and latchup. Key features: Provides understanding and knowledge of ESD models and specifications including human body model (HBM), machine model (MM), charged device model (CDM), charged board model (CBM), cable discharge events (CDE), human metal model (HMM), IEC 61000-4-2 and IEC 61000-4-5. Discusses new testing methodologies such as transmission line pulse (TLP), to very fast transmission line pulse (VF-TLP), and future methods of long pulse TLP, to ultra-fast TLP (UF-TLP). Describes both conventional testing and new testing techniques for both chip and system level evaluation. Addresses EOS testing, electromagnetic compatibility (EMC) scanning, to current reconstruction methods. Discusses latchup characterization and testing methodologies for evaluation of semiconductor technology to product testing. ESD Testing: From Components to Systems is part of the authors’ series of books on electrostatic discharge (ESD) protection; this book will be an invaluable reference for the professional semiconductor chip and system-level ESD and EOS test engineer. Semiconductor device and process development, circuit designers, quality, reliability and failure analysis engineers will also find it an essential reference. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, semiconductor testing and experimental work.