Author : Dietmar Schroeder
Publisher : Springer
Page : 225 pages
File Size : 28,54 MB
Release : 2012-11-01
Category : Technology & Engineering
ISBN : 9783709173688
This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.
Author : Dietmar Schroeder
Publisher : Springer Science & Business Media
Page : 234 pages
File Size : 43,17 MB
Release : 2013-03-09
Category : Technology & Engineering
ISBN : 3709166446
This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.
Author : Tibor Grasser
Publisher : World Scientific
Page : 220 pages
File Size : 20,14 MB
Release : 2003
Category : Technology & Engineering
ISBN : 9789812386076
Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.
Author : Christopher M. Snowden
Publisher : World Scientific
Page : 242 pages
File Size : 43,72 MB
Release : 1998
Category : Science
ISBN : 9789810236939
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Author : Christoph Jungemann
Publisher : Springer Science & Business Media
Page : 278 pages
File Size : 19,43 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 3709160863
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Author : Vassil Palankovski
Publisher : Springer Science & Business Media
Page : 309 pages
File Size : 26,35 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 3709105609
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Author : Gerhard Wachutka
Publisher : Springer Science & Business Media
Page : 387 pages
File Size : 11,24 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 3709106249
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Author : K. Antreich
Publisher : Birkhäuser
Page : 356 pages
File Size : 43,1 MB
Release : 2012-12-06
Category : Mathematics
ISBN : 3034880650
The third Conference on Mathematical Models and Numerical Simulation in Electronic Industry brought together researchers in mathematics, electrical engineering and scientists working in industry. The contributions to this volume try to bridge the gap between basic and applied mathematics, research in electrical engineering and the needs of industry.
Author : Joachim Piprek
Publisher : CRC Press
Page : 835 pages
File Size : 46,48 MB
Release : 2017-10-10
Category : Science
ISBN : 149874947X
• Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. • Gives a broad overview of concepts with concise explanations illustrated by real results. • Compares different levels of modeling, from simple analytical models to complex numerical models. • Discusses practical methods of model validation. • Includes an overview of numerical techniques.
Author : M. Anusuya
Publisher : CRC Press
Page : 427 pages
File Size : 26,65 MB
Release : 2024-11-27
Category : Science
ISBN : 104012108X
This book provides a comprehensive review of nanomaterials, including essential foundational examples of nanosensors, smart nanomaterials, nanopolymers, and nanotubes. Chapters cover their synthesis and characteristics, production methods, and applications, with specific sections exploring nanoelectronics and electro-optic nanotechnology, nanostructures, and nanodevices. This book is a valuable resource for interdisciplinary researchers who want to learn more about the synthesis of nanomaterials and how they are used in different types of energy storage devices, including supercapacitors, batteries, fuel cells solar cells in addition to electrical, chemical, and biomedical engineering. Key Features: Comprehensive overview of how nanomaterials can be utilised in a variety of interdisciplinary applications Explores the fundamental theories, alongside their electrochemical mechanisms and computation Discusses recent developments in electrode designing based on nanomaterials, separators, and the fabrication of advanced devices and their performances
