Modern Crystallography IV


Book Description

Modern Crystallography IV is devoted to a systematic and up- to-date description of fundamental physical properties of solid and liquid crystals. These include elastic and mechanical, dielectric and ferroelectric, magnetic and optical properties, transport phenomena and spectroscopy. An important feature of the treatment is its use of the crystallographic approach, an introduction to which is given in the opening chapter of the book. The topics are treated at a level understandable to students who have two years of university physics. Researchers and engineers working on practical applications should also find the book useful, as should specialists in other fields who wish to broaden their knowledge of crystallography and materials science. The book is written by a group of leading scientists from the Institute of Crystallography of the USSR Academy of Sciences.




Modern Crystallography IV


Book Description

Modern Crystallography IV is devoted to a systematic and up- to-date description of fundamental physical properties of solid and liquid crystals. These include elastic and mechanical, dielectric and ferroelectric, magnetic and optical properties, transport phenomena and spectroscopy. An important feature of the treatment is its use of the crystallographic approach, an introduction to which is given in the opening chapter of the book. The topics are treated at a level understandable to students who have two years of university physics. Researchers and engineers working on practical applications should also find the book useful, as should specialists in other fields who wish to broaden their knowledge of crystallography and materials science. The book is written by a group of leading scientists from the Institute of Crystallography of the USSR Academy of Sciences.







Modern Crystallography 2


Book Description

The four-volume treatment Modern Crystallography presents an encyclopaedic exposition of problems concerning the structure of crystals, their growth and their properties. Structure of Crystals deals with crystal structures in inorganic and organic compounds, polymers, liquid crystals, biological crystals and macromolecules.




Modern Crystallography III


Book Description

Early in this century, the newly discovered x-ray diffraction by crystals made a complete change in crystallography and in the whole science of the atomic structure of matter, thus giving a new impetus to the development of solid-state physics. Crystallographic methods, pri marily x-ray diffraction analysis, penetrated into materials sciences, mol ecular physics, and chemistry, and also into many other branches of science. Later, electron and neutron diffraction structure analyses be came important since they not only complement x-ray data, but also supply new information on the atomic and the real structure of crystals. Electron microscopy and other modern methods of investigating mat ter-optical, electronic paramagnetic, nuclear magnetic, and other res onance techniques-yield a large amount of information on the atomic, electronic, and real crystal structures. Crystal physics has also undergone vigorous development. Many re markable phenomena have been discovered in crystals and then found various practical applications. Other important factors promoting the development of crystallog raphy were the elaboration of the theory of crystal growth (which brought crystallography closer to thermodynamics and physical chem istry) and the development of the various methods of growing synthetic crystals dictated by practical needs. Man-made crystals became increas ingly important for physical investigations, and they rapidly invaded technology. The production . of synthetic crystals made a tremendous impact on the traditional branches: the mechanical treatment of mate rials, precision instrument making, and the jewelry industry.




Crystallography


Book Description

As a self-study guide, course primer or teaching aid, Borchardt-Ott's Crystallography is the perfect textbook for students and teachers alike. In fact, it can be used by crystallographers, chemists, mineralogists, geologists and physicists. Based on the author's more than 25 years of teaching experience, the book has numerous line drawings designed especially for the text and a large number of exercises - with solutions - at the end of each chapter. This 2nd edition is the translation of the fifth German edition. The heart of the book is firmly fixed in geometrical crystallography. It is from the concept of the space lattice




High Magnetic Fields in Semiconductor Physics II


Book Description

This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics", which was held at the University of Wiirzburg from August 22 to 26, 1988. In the tradition of previous Wiirzburg meetings on the subject - the first conference was held in 1972 - only invited papers were presented orally. All 42 lecturers were asked to review their subject to some extent so that this book gives a good overview of the present state of the respective topic. A look at the contents shows that the subjects which have been treated at previous conferences have not lost their relevance. On the contrary, the application of high magnetic fields to semiconductors has grown substantially during the recent past. For the elucidation of the electronic band structure of semicon ductors high magnetic fields are still an indispensable tool. The investigation of two-dimensional electronic systems especially is frequently connected with the use of high magnetic fields. The reason for this is that a high B-field adds angular momentum quantization to the boundary quantization present in het erostructures and superlattices. A glance at the contributions shows that the majority deal with 2D properties. Special emphasis was on the integral and fractional quantum Hall effect. Very recent results related to the observation of a fraction with an even denbminator were presented. It became obvious that the polarization of the different fractional Landau levels is more complicated than originally anticipated.




The Recursion Method and Its Applications


Book Description

This volume reviews recent advances in the development and application of the recursion method in computational solid state physics and elsewhere. It comprises the invited papers which were presented at a two-day conference at Imperial College, London during September 1984. The recursion method is based on the Lanczos algorithm for the tridiago nalisation of matrices, but it is much more than a straightforward numerical technique. It is widely regarded as the most elegant framework for a variety of calculations into which one may incorporate physical insights and a num ber of technical devices. The standard reference is Volume 35 of Solid State Physics, which contains all the early ideas of Heine, Haydock and others, upon which the method was established. The present volume provides the first review of subsequent developments. It also indicates where problems remain, or opinions differ, in the interpretation of the mathematical details or choice of practical techniques in applications. The field is still very li vely and much remains to be done, as the summary chapter clearly demonstra tes. We are grateful to the S. E. R. C. 's Collaborative Computational Project No. 9 on the electronic structure of solids and the Institute of Physics's Solid State Sub-committee for their sponsorship of the conference. We thank Angus MacKinnon for his help in conference organisation and Jacyntha Crawley for secretarial assistance. December 1984 David G. Pettifor Denis L. Weaire v Contents Part I Introduction Why Recur? By V.




Point Defects in Semiconductors II


Book Description

In introductory solid-state physics texts we are introduced to the concept of a perfect crystalline solid with every atom in its proper place. This is a convenient first step in developing the concept of electronic band struc ture, and from it deducing the general electronic and optical properties of crystalline solids. However, for the student who does not proceed further, such an idealization can be grossly misleading. A perfect crystal does not exist. There are always defects. It was recognized very early in the study of solids that these defects often have a profound effect on the real physical properties of a solid. As a result, a major part of scientific research in solid-state physics has,' from the early studies of "color centers" in alkali halides to the present vigorous investigations of deep levels in semiconductors, been devoted to the study of defects. We now know that in actual fact, most of the interest ing and important properties of solids-electrical, optical, mechanical- are determined not so much by the properties of the perfect crystal as by its im perfections.




The Theory of Magnetism II


Book Description

What is thermodynamics? What does statistical physics teach us? In the pages of this slim book, we confront the answers. The reader will discover that where thermodynami cs provi des a 1 arge scal e, macroscopi c theory of the ef fects of temperature on physical systems, statistical mechanics provides the microscopic analysis of these effects which, invariably, are the results of thermal disorder. A number of systems in nature undergo dramatic changes in aspect and in their properties when subjected to changes in ambient temperature or pres sure, or when electric or magnetic fields are applied. The ancients already knew that a liquid, a solid, or a gas can represent different states of the same matter. But what is meant by "state"? It is here that the systematic study of magnetic materials has provided one of the best ways of examining this question, which is one of the principal concerns of statistical physics (alias "statistical mechanics") and of modern thermodynamics.