Modulation-doped Field-effect Transistors for Low Distortion Microwave Mixing Applications
Author : Eric W. Lin
Publisher :
Page : 388 pages
File Size : 27,14 MB
Release : 1994
Category :
ISBN :
Author : Eric W. Lin
Publisher :
Page : 388 pages
File Size : 27,14 MB
Release : 1994
Category :
ISBN :
Author : L.L. Chang
Publisher : Springer Science & Business Media
Page : 718 pages
File Size : 11,41 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 940095073X
The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
Author : Heinrich Daembkes
Publisher : Institute of Electrical & Electronics Engineers(IEEE)
Page : 484 pages
File Size : 28,35 MB
Release : 1991
Category : Technology & Engineering
ISBN :
Author : Heinrich Daembkes
Publisher : Institute of Electrical & Electronics Engineers(IEEE)
Page : 544 pages
File Size : 23,55 MB
Release : 1991
Category : Technology & Engineering
ISBN :
Author : Masataka Higashiwaki
Publisher : Springer Nature
Page : 768 pages
File Size : 48,70 MB
Release : 2020-04-23
Category : Technology & Engineering
ISBN : 3030371530
This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.
Author : Ronald Waldo Grundbacher
Publisher :
Page : 256 pages
File Size : 44,38 MB
Release : 1997
Category :
ISBN :
The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.
Author : Steven Lawrence Yellen
Publisher :
Page : 232 pages
File Size : 10,97 MB
Release : 1986
Category : Field-effect transistors
ISBN :
Author : Paul Raymond De la Houssaye
Publisher :
Page : 310 pages
File Size : 45,97 MB
Release : 1988
Category : Modulation-doped field-effect transistors
ISBN :
Author : Lovell H. Camnitz
Publisher :
Page : 430 pages
File Size : 23,58 MB
Release : 1986
Category : Field-effect transistors
ISBN :
Author : Loi Dinh Nguyen
Publisher :
Page : 434 pages
File Size : 41,75 MB
Release : 1989
Category : Field-effect transistors
ISBN :