Multiscale Modeling Strategies for Chemical Vapor Deposition


Book Description

(Cont.) In order to model selective epitaxy, the mask is represented as a hard wall boundary condition, and overgrowth on (111)A facets is included. With this model, we investigate the effects of the unknown parameters and the growth conditions on film morphology evolution. The observed trends are in agreement with the experimental data. Since KMC simulations are limited to small surfaces and short deposition times we propose algorithms for linking the KMC and mesoscale feature shape evolution models. Finally, the feasibility of linking the coupled KMC-mesoscale model and the reactor or reactor-feature scale models is assessed.







Miniaturized Transistors


Book Description

What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.







Multi-scale Modeling of Chemical Vapor Deposition


Book Description

Multi-scale modeling of chemical vapor deposition (CVD) is a very broad topic because a large number of physical processes affect the quality and speed of film deposition. These processes have different length scales associated with them creating the need for a multi-scale model. The three main scales of importance to the modeling of CVD are the reactor scale, the feature scale, and the atomic scale. The reactor scale ranges from meters to millimeters and is called the reactor scale because it corresponds with the scale of the reactor geometry. The micrometer scale is labeled as the feature scale in this study because this is the scale related to the feature geometries. However, this is also the scale at which grain boundaries and surface quality can be discussed. The final scale of importance to the CVD process is the atomic scale. The focus of this study is on the reactor and feature scales with special focus on the coupling between these two scales. Currently there are two main methods of coupling between the reactor and feature scales. The first method is mainly applied when a modified line of sight feature scale model is used, with coupling occurring through a mass balance performed at the wafer surface. The second method is only applicable to Monte Carlo based feature scale models. Coupling in this second method is accomplished through a mass balance performed at a plane offset from the surface.




Chemical Vapor Deposition


Book Description

In early 1987 I was attempting to develop a CVD-based tungsten process for Intel. At every step ofthe development, information that we were collecting had to be analyzed in light of theories and hypotheses from books and papers in many unrelated subjects. Thesesources were so widely different that I came to realize there was no unifying treatment of CVD and its subprocesses. More interestingly, my colleagues in the industry were from many disciplines (a surface chemist, a mechanical engineer, a geologist, and an electrical engineer werein my group). To help us understand the field of CVD and its players, some of us organized the CVD user's group of Northern California in 1988. The idea for writing a book on the subject occurred to me during that time. I had already organized my thoughts for a course I taught at San Jose State University. Later Van Nostrand agreed to publish my book as a text intended for students at the senior/first year graduate level and for process engineers in the microelectronics industry, This book is not intended to be bibliographical, and it does not cover every new material being studied for chemical vapor deposition. On the other hand, it does present the principles of CVD at a fundamental level while uniting them with the needs of the microelectronics industry.




AIChE Symposium Series


Book Description




Control and Optimization of Multiscale Process Systems


Book Description

This book—the first of its kind—presents general methods for feedback controller synthesis and optimization of multiscale systems, illustrating their application to thin-film growth, sputtering processes, and catalytic systems of industrial interest. The authors demonstrate the advantages of the methods presented for control and optimization through extensive simulations. Included in the work are new techniques for feedback controller design and optimization of multiscale process systems that are not included in other books. The book also contains a rich collection of new research topics and references to significant recent work.