› › N Polar Iii Nitride Optoelectronic Devices

Optoelectronic Devices

Author : M Razeghi

Publisher : Elsevier

Page : 602 pages

File Size : 28,46 MB

Release : 2004

Category : Science

ISBN : 9780080444260

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Book Description

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides



N-Polar III-Nitride Optoelectronic Devices

Author : Fatih Akyol

Publisher :

Page : 45 pages

File Size : 43,65 MB

Release : 2011

Category :

ISBN :

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Book Description

Abstract: III-Nitride semiconductors have a tunable direct band gap starting from 0.7 to 6.2 eV, which makes them one of the most useful material systems especially for optoelectronic applications. Regarding to the solar cell applications, the highest efficiencies have been reported by using InGaP/(In)GaAs/Ge multi-junction solar cells. Since this material system is limited with a widest applicable band gap for InGaP around 1.86 eV, highest solar cell efficiencies has been limited by lack of solar cells having a band gap around 2.3 eV. In this research, 2.3 eV InGaN p-i-n solar cells has been simulated and shown that the optimum thickness of the intrinsic layer thickness is a strong function of minority carrier mobility and lifetime. The results indicated that efficiency of InGaN p-n junction solar cells can be enhanced ~35% by using optimized p-i-n designs. III-Nitrides have been widely used for light emitting diode (LED) applications. The researches have been conducted on devices grown various crystal planes including c- (Ga-polar), semi-polar and non-polar planes. However, based on our knowledge, the N-polar orientation of c-plane has not been studied both theoretically and experimentally. Thus, in this report, the Silvaco Atlas simulations have been carried out for both Ga-polar and N-polar single quantum well blue LEDs. The results have pointed out that N-polar LEDs show much less electron and hole overflow current with ~ 1V less turn-on voltage operation compared to Ga-polar LEDs. In the experimental part, the first N-polar green led grown by molecular beam epitaxy (MBE) has been demonstrated. The device showed peak emission wavelengths varying from 564.5 to 540 nm. The full width at half-maximum reduced from 74 to 63 nm as the drive current was increased to 180 A/cm2.



III-Nitride Semiconductor Optoelectronics

Author :

Publisher : Academic Press

Page : 490 pages

File Size : 29,47 MB

Release : 2017-01-05

Category : Technology & Engineering

ISBN : 012809723X

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Book Description

III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. Contains the latest breakthrough research in III-nitride optoelectronics Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies



III-Nitride Semiconductors

Author : M.O. Manasreh

Publisher : Elsevier

Page : 463 pages

File Size : 11,53 MB

Release : 2000-12-06

Category : Science

ISBN : 0080534449

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Book Description

Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.



Group III-Nitride Semiconductor Optoelectronics

Author : Choudhury J. Praharaj

Publisher : John Wiley & Sons

Page : 196 pages

File Size : 14,64 MB

Release : 2023-11-07

Category : Technology & Engineering

ISBN : 111970863X

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Book Description

Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloys In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. Choudhury J. Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems. The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits. Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Detailed appendices contain Maxwell's equations in dielectric media and descriptions of time-dependent perturbation theory and light-matter interaction. Readers will also benefit from: A thorough introduction to the band structure and optical properties of group III-nitride semiconductors Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures Practical discussions of the optical properties of low dimensional structures in group III-nitrides In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits Concise treatments of the quantum optical properties of nitride semiconductor devices Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.



Iii-nitride Semiconductor Materials

Author : Zhe Chuan Feng

Publisher : World Scientific

Page : 442 pages

File Size : 17,86 MB

Release : 2006-03-20

Category : Technology & Engineering

ISBN : 1908979941

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Book Description

III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a



III-nitride Devices and Nanoengineering

Author : Zhe Chuan Feng

Publisher : World Scientific

Page : 477 pages

File Size : 35,56 MB

Release : 2008

Category : Technology & Engineering

ISBN : 1848162235

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Book Description

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.



III-Nitride Electronic Devices

Author :

Publisher : Academic Press

Page : 546 pages

File Size : 18,55 MB

Release : 2019-10-18

Category : Science

ISBN : 0128175451

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Book Description

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas – RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field



Optoelectronic Devices: III Nitrides

Author : Mohamed Henini

Publisher : Elsevier

Page : 578 pages

File Size : 44,7 MB

Release : 2004-12-17

Category : Science

ISBN : 0080538118

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Book Description

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides



Theoretical Studies and Modeling of III-V Nitride Materials and Devices for Optoelectronic Applications

Author :

Publisher :

Page : 0 pages

File Size : 29,6 MB

Release : 1999

Category :

ISBN :

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Book Description

Two main objectives of this research program include: (1) investigation of the fundamental material, transport, and optical properties of III-V nitrides; and (2) simulation and design optimization of GaN-based optoelectronic devices. Study of fundamental physical properties (such as carrier scattering and optical transitions) is based on an envelope function formalism for accurate description of band spectrum in bulk and confined structures. Numerical analyses and optimization of GaN-based devices are approached by solving a set of coupled equations self-consistently. This research initiative has provided valuable insight for the development and optimization of III-V nitride optoelectronic devices, particularly, blue/UV quantum well lasers.