Book Description

This volume focuses on current theoretical and experimental investigations of defects in III-V and II-VI compounds, silicon, germanium, Si-Ge alloys, and amorphous semiconductors. The discussions also address the metastability and superconductivity induced by point defects, dislocations and processing in semiconductors. An important feature of this book are the special papers on defects in SiC and IV-VI compounds, and the contributions on hot topics such as nonequilibrium diffusion, negative-U defects and several new techniques.