Recombination Lifetime Measurements in Silicon
Author : Dinesh C. Gupta
Publisher : ASTM International
Page : 389 pages
File Size : 48,88 MB
Release : 1998
Category : Electronic measurements
ISBN : 0803124899
Author : Dinesh C. Gupta
Publisher : ASTM International
Page : 389 pages
File Size : 48,88 MB
Release : 1998
Category : Electronic measurements
ISBN : 0803124899
Author : E. Kamieniecki
Publisher :
Page : 9 pages
File Size : 29,94 MB
Release : 1998
Category : Carrier lifetime measurement
ISBN :
Minority carrier recombination lifetime is one of the basic parameters that can provide information regarding the condition of the silicon substrate at various stages of the device manufacturing process. The key challenge is to effectively separate surface region effects from the bulk and to determine the minority carrier lifetime that is selectively related to the surface region of the silicon. This paper reviews requirements, physical principles, and implementation of the non-contact measurement of the minority carrier recombination lifetime, which is controlled solely by the characteristics of the silicon surface and sub-surface region. The method is based on a short wavelength, low light intensity, and high modulation frequency ac-SPV. Examples of experimental results using a commercial system developed to implement such methodology are discussed.
Author : W. Murray Bullis
Publisher :
Page : 68 pages
File Size : 33,37 MB
Release : 1968
Category : Semiconductors
ISBN :
About 300 papers concerned with the measurement and interpretation of carrier lifetime in semiconductors are listed together with key words and a brief comment for each. Eight types of entries are included: Description of Methods, Analysis of Results, Standard Methods, Experimental Results, Theroetical Models, Auxiliary Procedures and Data, Reviews, and Books. Emphasis is placed on methods of carrying out measurements of carrier lifetime. Hence complete coverage was attempted and nearly two thirds of the entries appear in the first three categories. A large fraction of the papers listed describe the photoconductivity or photoconductive decay methods. The other most popular methods are based on diode characteristics or the photomagnetoelectric effect. In all, 35 methods for measuring carrier lifetime are represented by entries. In addition, representative papers which describe various models for recombination are included together with a number of papers which discuss the influence of surface recombination and trapping phenomena. Auxiliary procedures such as surface preparation, formation of ohmic contacts, control of temperature, and the like are described in some of the entries. Two indexes, a Key Word Index and an Author Index, are provided together with a classification of the various methods for measuring carrier lifetime. (Author).
Author :
Publisher :
Page : 724 pages
File Size : 21,34 MB
Release : 2000
Category : Crystal growth
ISBN :
Author : Electrochemical Society. Meeting
Publisher : The Electrochemical Society
Page : 720 pages
File Size : 27,78 MB
Release : 2000
Category : Science
ISBN : 9781566772846
"... papers that were presented at the Sixth Symposium on High Purity Silicon held in Phoenix, Arizona at the 198th Meeting of the Electrochemical Society, October 22-27, 2000."--Preface.
Author : Markku Tilli
Publisher : Elsevier
Page : 1028 pages
File Size : 15,93 MB
Release : 2020-04-17
Category : Technology & Engineering
ISBN : 012817787X
Handbook of Silicon Based MEMS Materials and Technologies, Third Edition is a comprehensive guide to MEMS materials, technologies, and manufacturing with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, modeling, manufacturing, processing, system integration, measurement, and materials characterization techniques of MEMS structures. The third edition of this book provides an important up-to-date overview of the current and emerging technologies in MEMS making it a key reference for MEMS professionals, engineers, and researchers alike, and at the same time an essential education material for undergraduate and graduate students. Provides comprehensive overview of leading-edge MEMS manufacturing technologies through the supply chain from silicon ingot growth to device fabrication and integration with sensor/actuator controlling circuits Explains the properties, manufacturing, processing, measuring and modeling methods of MEMS structures Reviews the current and future options for hermetic encapsulation and introduces how to utilize wafer level packaging and 3D integration technologies for package cost reduction and performance improvements Geared towards practical applications presenting several modern MEMS devices including inertial sensors, microphones, pressure sensors and micromirrors
Author : Angèle Reinders
Publisher : John Wiley & Sons
Page : 755 pages
File Size : 47,12 MB
Release : 2017-02-06
Category : Technology & Engineering
ISBN : 111892746X
Solar PV is now the third most important renewable energy source, after hydro and wind power, in terms of global installed capacity. Bringing together the expertise of international PV specialists Photovoltaic Solar Energy: From Fundamentals to Applications provides a comprehensive and up-to-date account of existing PV technologies in conjunction with an assessment of technological developments. Key features: Written by leading specialists active in concurrent developments in material sciences, solar cell research and application-driven R&D. Provides a basic knowledge base in light, photons and solar irradiance and basic functional principles of PV. Covers characterization techniques, economics and applications of PV such as silicon, thin-film and hybrid solar cells. Presents a compendium of PV technologies including: crystalline silicon technologies; chalcogenide thin film solar cells; thin-film silicon based PV technologies; organic PV and III-Vs; PV concentrator technologies; space technologies and economics, life-cycle and user aspects of PV technologies. Each chapter presents basic principles and formulas as well as major technological developments in a contemporary context with a look at future developments in this rapidly changing field of science and engineering. Ideal for industrial engineers and scientists beginning careers in PV as well as graduate students undertaking PV research and high-level undergraduate students.
Author : Robert Hull
Publisher : IET
Page : 1054 pages
File Size : 16,55 MB
Release : 1999
Category : Electronic books
ISBN : 9780852969335
A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.
Author : Dieter K. Schroder
Publisher : John Wiley & Sons
Page : 800 pages
File Size : 14,93 MB
Release : 2015-06-29
Category : Technology & Engineering
ISBN : 0471739065
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author : Stefan Rein
Publisher : Springer Science & Business Media
Page : 513 pages
File Size : 50,12 MB
Release : 2005-11-25
Category : Science
ISBN : 3540279229
Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.