Optimization of a Plasma Doping Technique for Ultra-shallow Junction Formation in Silicon
Author : David LeRoy Chapek
Publisher :
Page : 260 pages
File Size : 20,26 MB
Release : 1995
Category :
ISBN :
Author : David LeRoy Chapek
Publisher :
Page : 260 pages
File Size : 20,26 MB
Release : 1995
Category :
ISBN :
Author : Mehmet C. Öztürk
Publisher : The Electrochemical Society
Page : 444 pages
File Size : 24,53 MB
Release : 2004
Category : Technology & Engineering
ISBN : 9781566774062
Author : Moon Chun
Publisher :
Page : 152 pages
File Size : 37,17 MB
Release : 1999
Category :
ISBN :
Author : Erin Catherine Jones
Publisher :
Page : 428 pages
File Size : 14,69 MB
Release : 1996
Category :
ISBN :
Author : V. Narayanan
Publisher : The Electrochemical Society
Page : 367 pages
File Size : 14,93 MB
Release : 2009-05
Category : Gate array circuits
ISBN : 1566777097
This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Author :
Publisher :
Page : 780 pages
File Size : 11,66 MB
Release : 1996
Category : Dissertations, Academic
ISBN :
Author :
Publisher :
Page : 2540 pages
File Size : 30,88 MB
Release : 2002
Category : Chemistry
ISBN :
Author :
Publisher : Newnes
Page : 3572 pages
File Size : 25,82 MB
Release : 2011-01-28
Category : Science
ISBN : 0080932282
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author : Young Suh Song
Publisher : Springer Nature
Page : 930 pages
File Size : 30,27 MB
Release :
Category :
ISBN : 9819966493
Author : C. Claeys
Publisher : The Electrochemical Society
Page : 335 pages
File Size : 46,91 MB
Release : 2015
Category :
ISBN : 1607686759