Oxide Films


Book Description




Thin Films and Heterostructures for Oxide Electronics


Book Description

Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.




Oxide Films


Book Description

The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Oxide Films¿, held during the 216th meeting of The Electrochemical Society, in Vienna, Austria from October 4 to 9, 2009.




Chemical Solution Deposition of Functional Oxide Thin Films


Book Description

This is the first text to cover all aspects of solution processed functional oxide thin-films. Chemical Solution Deposition (CSD) comprises all solution based thin- film deposition techniques, which involve chemical reactions of precursors during the formation of the oxide films, i. e. sol-gel type routes, metallo-organic decomposition routes, hybrid routes, etc. While the development of sol-gel type processes for optical coatings on glass by silicon dioxide and titanium dioxide dates from the mid-20th century, the first CSD derived electronic oxide thin films, such as lead zirconate titanate, were prepared in the 1980’s. Since then CSD has emerged as a highly flexible and cost-effective technique for the fabrication of a very wide variety of functional oxide thin films. Application areas include, for example, integrated dielectric capacitors, ferroelectric random access memories, pyroelectric infrared detectors, piezoelectric micro-electromechanical systems, antireflective coatings, optical filters, conducting-, transparent conducting-, and superconducting layers, luminescent coatings, gas sensors, thin film solid-oxide fuel cells, and photoelectrocatalytic solar cells. In the appendix detailed “cooking recipes” for selected material systems are offered.













Transparent Conducting Pure and Tin Doped Indium Oxide Films - Preparation and Characterization


Book Description

Badeker in 1907 observed that some materials are optically transparent in the visible light and electrically conducting [1]. Because of the increasing interest in electrically and electronically active materials, the search for materials and the techniques for producing semi-transparent electrically conducting films have gained much importance. In an intrinsic stoichiometric material, it is not possible to have simultaneously high transparency (>80%%) in the visible region and high electrical conductivity (>103 Ω cm-1). A variety of metals in thin film form (







Oxygen transport in thin oxide films at high field strength


Book Description

Ionic transport in nanostructures at high eld strength has recently gained attention, because novel types of computer memory with potentially superior properties rely on such phenomena. The applied voltages are only moderate, but they drop over the distance of a few nanometers and lead to extreme eld strengths in the MV/cm region. Such strong elds contributes signi cantly to the activation energy for ionic jump processes. This leads to an exponential increase of transport speed with voltage. Conventional high-temperature ionic conduction, in contrast, only relies on thermal activation for such jumps. In this thesis, the transport of minute amounts of oxygen through a thin dielectric layer sandwiched between two thin conducting oxide electrodes was detected semiquantitatively by measuring the conductance change of the electrodes after applying a current through the dielectric layer. The relative conductance change G=G as a function of current I and duration t follows over several orders of magnitude a simple, empirical law of the form G=G = CIAtB with t parameters C, A and B; A;B 2 [0; 1]. This empirical law can be linked to a predicted exponential increase of the transport speed with voltage at high eld strength. The behavior in the time domain can be explained with a spectrum of relaxation processes, similar to the relaxation of dielectrics. The in uence of temperature on the transport is strong, but still much lower than expected. This contradicts a commonly used law for high- eld ionic transport. The di erent oxide layers are epitaxial with thicknesses between 5 and 70 nm. First large-scale test samples were fabricated using shadow masks. The general behavior of such devices was studied extensively. In an attempt to achieve quantitative results with defect-free, miniaturized devices, a lithographic manufacturing process that uses repeated steps of epitaxial deposition and structuring of the layers was developed. It employs newly developed and optimized wet chemical etching processes for the conducting electrodes. First high-quality devices could be manufactured with this process and con rmed that such devices su er less from parasitic e ects. The lithographically structured samples were made from di erent materials. The results from the rst test samples and the lithographically structured samples are therefore not directly comparable. They do exhibit however in principle the same behavior. Further investigation of such lithographically structured samples appears promising