Author : I. Buyanova
Publisher : CRC Press
Page : 457 pages
File Size : 43,91 MB
Release : 2004-08-30
Category : Science
ISBN : 1482296497
Since their development in the 1990s, it has been discovered that diluted nitrides have intriguing properties that are not only distinct from those of conventional semiconductor materials, but also are conducive to various applications in optoelectronics and photonics. The book examines these applications and presents a broad and in-depth look at t
Author : Mohamed Henini
Publisher : Elsevier
Page : 648 pages
File Size : 18,49 MB
Release : 2004-12-15
Category : Technology & Engineering
ISBN : 0080455999
- This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. - It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics - Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field - Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community
Author : Ayse Erol
Publisher : Springer Science & Business Media
Page : 607 pages
File Size : 26,8 MB
Release : 2008-01-12
Category : Technology & Engineering
ISBN : 3540745297
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Author : Viktor Evgen?evich Borisenko
Publisher : World Scientific
Page : 669 pages
File Size : 43,63 MB
Release : 2009
Category : Science
ISBN : 9814280356
The book presents invited reviews and original short notes with recent results obtained in fabrication study and application of nanostructures, which are promising for new generations of electronic and optoelectronic devices. Recent developments in nanotechnology, nanoelectronics, spintronics, nanophotonics, nanosensorics and nanobiology are presented.
Author : A.G. Cullis
Publisher : Springer Science & Business Media
Page : 504 pages
File Size : 27,44 MB
Release : 2008-12-02
Category : Technology & Engineering
ISBN : 1402086156
This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.
Author : Chua Soo-Jin
Publisher : CRC Press
Page : 297 pages
File Size : 32,65 MB
Release : 2020-03-26
Category : Science
ISBN : 1000083195
This proceeding is a collection of selected papers presented at Symposium O of Compound Semiconductor Photonics in the International Conference on Materials for Advanced Technology (ICMAT), which was held in Singapore from 28 June to 3 July 2009. The symposium covers a wide range of topics from fundamental semiconductor materials study to photonic device fabrication and application. The papers collected are of recent progress in the active and wide range of semiconductor photonics research. They include materials-related papers on III-As/P, III-nitride, quantum dot/wire/dash growth, ZnO, and chalcogenide, and devices-related papers on photonic crystals, VCSEL, quantum dot/dash lasers, LEDs, waveguides, solar cells and heterogeneous integrat
Author : Victor E Borisenko
Publisher : World Scientific
Page : 669 pages
File Size : 18,50 MB
Release : 2009-04-24
Category : Science
ISBN : 981446726X
The book presents invited reviews and original short notes with recent results obtained in fabrication study and application of nanostructures, which are promising for new generations of electronic and optoelectronic devices.Recent developments in nanotechnology, nanoelectronics, spintronics, nanophotonics, nanosensorics and nanobiology are presented.
Author : Zhe Chuan Feng
Publisher : World Scientific
Page : 442 pages
File Size : 17,36 MB
Release : 2006-03-20
Category : Technology & Engineering
ISBN : 1908979941
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Author : Gianluca Ciatto
Publisher : CRC Press
Page : 308 pages
File Size : 21,90 MB
Release : 2015-04-01
Category : Science
ISBN : 9814463469
The nonlinear behavior of nitrogen and the passivation effect of hydrogen in dilute nitrides open the way to the manufacture of a new class of nanostructured devices with in-plane variation of the optical band gap. This book addresses the modifications of the electronic structure and of the optical and structural properties induced in these technol
Author : Giovanni Agostini
Publisher : Elsevier
Page : 501 pages
File Size : 41,19 MB
Release : 2011-08-11
Category : Science
ISBN : 0080558151
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
