Pressure-temperature Effects on Charge-transport in Transition-metal Oxides


Book Description

Effects of pressure and temperature on electrical conductivity and thermoelectric power of NiO, CoO, Fe2O3, and Cu2O were measured. The temperature dependence of conductivity and Seebeck coefficient in lithium doped NiO and CoO single crystals indicated that hole mobility was thermally activated with an activation energy of 0.1 ev. Hopping type transport appeared likely in these materials. The temperature dependence of electrical properties on pressure compacted titanium doped Fe2O3 also indicated that electron mobility was thermally activated. Electrical conductivity of Cu2O single crystals increased exponentially with temperature in the 300K to 500K range. The activation energy was 0.26 ev. The Seebeck coefficient was nearly constant, about 1 mv/deg. C from 300K to 500K. Hopping transport is a diffusion process and may have an associated heat of transport. If the heat of transport is not nearly zero, the usual equations for charge concentration and mobility in terms of resistivity and thermoelectric power are not correct. It can be shown that according to the Holstein hopping model the heat of transport should be nearly zero. Conclusions about charge carrier mobility from resistivity and thermoelectric power measurements should be nearly correct. (Author).
















NBS Special Publication


Book Description










The Mott Metal-Insulator Transition


Book Description

Little do we reliably know about the Mott transition, and we are far from a complete understanding of the metal --insulator transition due to electr- electron interactions. Mott summarized his basic ideas on the subject in his wonderful book Metal--Insulator nansitions that first appeared in 1974 11. 1). In his view, a Motk insulator displays a gap for charge-carrying excitations due to electron cowelations, whose importance is expressed by the presence of local magnetic moments regardless of whether or not they are ordered. Since the subject is far from being settled, different opinions on specific aspects of the Mott transition still persist. This book naturally embodies my own understanding of the phenomenon, inspired by the work of the late Sir Kevill Mott. The purpose of this book is twofold: first, to give a detailed presen- tion of the basic theoretical concopts for Mott insulators and, second, to test these ideas against the results from model calculations. For this purpose the Hubbard model and some of its derivatives are best suited. The Hubbard model describes a Mott transition with a mere minimum of tunable par- eters, and various exact statements and even exact solutions exist in certain limiting cases. Exact solutions not only allow us to test our basic ideas, but also help to assess the quality of approxin~ate theories for correlated electron systems.