Proceedings of the International Conference on Microelectronics, Computing & Communication Systems


Book Description

This volume comprises select papers from the International Conference on Microelectronics, Computing & Communication Systems(MCCS 2015). Electrical, Electronics, Computer, Communication and Information Technology and their applications in business, academic, industry and other allied areas. The main aim of this volume is to bring together content from international scientists, researchers, engineers from both academia and the industry. The contents of this volume will prove useful to researchers, professionals, and students alike.




Oxides / Oxide


Book Description

Volume III/28 is a supplement to volume III/16a+b Ferroelectrics and Related Substances. It also consists of two parts a and b. The present subvolume III/28a contains data on ferroelectric oxides, supplementing III/16a which appeared in 1981. Subvolume III/28b, due in 1990, will cover non-oxides, supplementing III/16b (published in 1982). Reliable data on both pure compounds and solid solutions, published mostly between 1978 and 1986 and some data from the literature up to early 1988 are critically evaluated and included. The dielectric and ferroelectric behaviour, as well as all other properties relevant to the characterization of these substances are presented in tables and figures. About 22,000 references have been surveyed with the aid of a computer. All values are given in SI units. Rapid localization of the required data is facilitated by an alphabetical index of substances and a two-dimensional survey of substances and properties dealt with in both subvolumes III/28a and III/16a.




Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes)


Book Description

These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.




Polarons and Excitons in Polar Semiconductors and Ionic Crystals


Book Description

The 1982 Antwerp Advanced Study Institute on "Physics of Polarons and Excitons in Polar Semiconductors and Ionic Crystals" took place from July 26 till August 5 at the Conference Center Priorij Corsen donk, a restored monastery, close to the city of Antwerp. It was the seventh Institute in our series which started in 1971. This Advanced Study Institute, which was held fifty years after Landau introduced the polaron concept, can be considered as the third major international symposium devoted to the physics of pola rons. The first such symposium took place in St. Andrews in 1962 under the title "Polarons and Excitons" [I]. The early theoretical developments related to polarons were reviewed in depth at this meeting; the derivation of the polaron hamiltonian by Frohlich, the Frohlich weak coupling theory (and the equivalent weak coupling canonical transformations), the Landau-Pekar and Bogolubov strong coupling theory and the Feynman polaron model formulated with his path integrals. The main emphasis was on the polaron self-energy, effective mass and mobility. From the experimental side the first evidence for polaron effects was provided by the pioneering cyclotron and mobility measurements o~ the silver halides by F. e. Brown and his group. Also the significance of polaron effects for the under standing of excitons in ionic crystals was a central topic in St. Andrews. The second Advanced Study Institute concerning polaron physics was organized at the University of Antwerp (R. U. C. A.




Comprehensive Semiconductor Science and Technology


Book Description

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts







Physics and Chemistry of III-V Compound Semiconductor Interfaces


Book Description

The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.