Properties of Silicon Germanium and SiGe


Book Description

The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC, with over 20 companies planning manufacture in the near future. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distils in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe: C, self-assembled nanostructures, quantum effects and device trends. The book contains 75% more text than Prof. Kasper's earlier book Properties of strained and relaxed SiGe (INSPEC, IEE, 1995), thoroughly updates its content and adds many new topics.







Silicon-germanium Heterojunction Bipolar Transistors


Book Description

This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.




Silicon-Germanium Carbon Alloys


Book Description

Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials




Properties of Advanced Semiconductor Materials


Book Description

Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.




Silicon-Germanium (SiGe) Nanostructures


Book Description

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition




Properties of Strained and Relaxed Silicon Germanium


Book Description

This volume systematically evaluates and reviews the properties of silicon germanium within a structured framework, relating them where appropriate to stoichiometry and strain. The invited contributions include concise discussion and expert guidance to the reference literature.




Silicon Quantum Integrated Circuits


Book Description

Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.




Thermoelectrics


Book Description

This book provides a concise but comprehensive introduction to the fundamentals and current state of the art in thermoelectrics. Addressing an audience of materials scientists and engineers, the book covers theory, materials selection, and applications, with a wide variety of case studies reflecting the most up-to-date research approaches from the past decade, from single crystal to polycrystalline form and from bulk to thin films to nano dimensions. The world is facing major challenges for finding alternate energy sources that can satisfy the increasing demand for energy consumption while preserving the environment. The field of thermoelectrics has long been recognized as a potential and ideal source of clean energy. However, the relatively low conversion efficiency of thermoelectric devices has prevented their utility on a large scale. While addressing the need for thermal management in materials, device components, and systems, thermoelectrics provides a fundamental solution to waste heat recovery and temperature control. This book summarizes the global efforts that have been made to enhance the figure of merit of various thermoelectric materials by choosing appropriate processes and their influence on properties and performance. Because of these advances, today, thermoelectric devices are found in mainstream applications such as automobiles and power generators, as opposed to just a few years ago when they could only be used in niche applications such as in aeronautics, infrared imaging, and space. However, the continued gap between fundamental theoretical results and actual experimental data of figure of merit and performance continues to challenge the commercial applications of thermoelectrics. This book presents both recent achievements and continuing challenges, and represents essential reading for researchers working in this area in universities, industry, and national labs.