Novel Three-state Quantum Dot Gate Field Effect Transistor


Book Description

The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.




Chemical Abstracts


Book Description




Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing


Book Description

Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies. This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices. - Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and more - Discusses fundamental mechanisms and design strategies for two- and three-terminal device structures - Addresses device challenges and strategies to enable translation of optical and optoelectronic technologies







JJAP


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Nanotechnology For Electronics, Biosensors, Additive Manufacturing And Emerging Systems Applications


Book Description

Published as part of the well-established book series, Selected Topics in Electronics and Systems, this compendium features 18 peer reviewed articles focusing on high-performance materials and emerging devices for implementation in high-speed electronic systems.Wide-ranging topics span from novel materials and devices, biosensors and bio-nano-systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields.Systems for implementing data with security tokens; single chemical sensor for multi-analyte mixture detection; RF energy harvesters; additively manufactured RF devices for 5G, IoT, RFID and smart city applications are also prominently included.Written by eminent researchers, recent developments also highlight equivalent circuits models at room temperature and 4.2 K; quantum dot nonvolatile memories, 3D-confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications.




China


Book Description

The Republic of Korea's industrial policy has directed that nation's economy through nearly three decades of spectacular growth. But the authors of this paper maintain that this policy is showing signs of being outmoded. The time has come, the authors argue, for the Korean government to stop managing the economy's structural development and to redefine the responsibilities of business and government. Under this proposed compact, the allocation of resources would shift from the government to the private industrial and financial sectors. The transformation of the government bureaucracy from an ad hoc policy role to one of a transparent and predictable regulator is a key to the success of this undertaking. These new directions would present the government with enormous challenges. Greater competitive discipline and regulatory oversight would be required. While dealing with the complexities of the transition, the government would have to maintain macroeconomic stability and the momentum of savings and investment. For comparison, the study examines the industrial economies of France, Germany, Japan, and the United States, which underwent similar shifts.







Emerging Nanoelectronics


Book Description