Physical Models of Semiconductor Quantum Devices


Book Description

This detailed book addresses three main areas of solid state electronics, providing an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors.







Scientific and Technical Aerospace Reports


Book Description

Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.




Chemical Abstracts


Book Description




The New Superconducting Electronics


Book Description

This volume is based on the proceedings of the NATO-sponsored Advanced Studies Institute (ASn on The New Superconducting Electronics (held 9-20 August 1992 in Waterville Valley, New Hampshire USA). The contents herein are intended to provide an update to an earlier volume on the same subject (based on a NATO ASI held in 1988). Four years seems a relatively short time interval, and our title itself, featuring The New Superconducting Electronics, may appear somewhat pretentious. Nevertheless, we feel strongly that the ASI fostered a timely reexamination of the technical progress and application potential of this rapid-paced field. There are, indeed, many new avenues for technological innovation which were not envisioned or considered possible four years ago. The greatest advances by far have occurred with regard to oxide superconductors, the so-called high transition-temperature superconductors, known in short as HTS. These advances are mainly in the ability to fabricate both (1) high-quality, relatively large-area films for microwave filters and (2) multilayer device structures, principally superconducting-normal-superconducting (SNS) Josephson junctions, for superconducting-quantum-interference-device (SQUID) magnetometers. Additionally, we have seen the invention and development of the flux-flow transistor, a planar three-terminal device. During the earlier ASI only the very first HTS films with adequate critical-current density had just been fabricated, and these were of limited area and had high resistance for microwave current.




Science Abstracts


Book Description




Delta-doping of Semiconductors


Book Description

This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.







Physics Briefs


Book Description




Semiconductors


Book Description

English translation of Fizika i tekhnika poluprovodnikov; covers semiconductor research in countries of the Former Soviet Union. Topics include semiconductor theory, transport phenomena in semiconductors, optics, magneto-optics, and electro-optics of semiconductors, semiconductor lasers, and semiconductor surface physics. Includes book reviews.