Resistive Switching in Transition Metal Oxides for Integrated Non-volatile Memory
Author : Sanjoy Kumar Nandi
Publisher :
Page : 0 pages
File Size : 45,88 MB
Release : 2017
Category :
ISBN :
Author : Sanjoy Kumar Nandi
Publisher :
Page : 0 pages
File Size : 45,88 MB
Release : 2017
Category :
ISBN :
Author : Daniele Ielmini
Publisher :
Page : 755 pages
File Size : 21,48 MB
Release : 2016
Category : TECHNOLOGY & ENGINEERING
ISBN : 9783527680870
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Author : Panagiotis Dimitrakis
Publisher : Elsevier
Page : 534 pages
File Size : 46,88 MB
Release : 2022-03-01
Category : Technology & Engineering
ISBN : 0128146303
Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
Author : Daniele Ielmini
Publisher : John Wiley & Sons
Page : 1010 pages
File Size : 41,57 MB
Release : 2015-12-23
Category : Technology & Engineering
ISBN : 3527680934
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Author : Lin Yang
Publisher : Forschungszentrum Jülich
Page : 141 pages
File Size : 29,50 MB
Release : 2011
Category :
ISBN : 3893367071
Author :
Publisher : The Electrochemical Society
Page : 256 pages
File Size : 24,41 MB
Release : 2011
Category : Integrated circuits
ISBN : 1566778999
Author : Irina Kärkkänen
Publisher : Forschungszentrum Jülich
Page : 151 pages
File Size : 14,10 MB
Release : 2014
Category :
ISBN : 3893369716
Author : F. Roozeboom
Publisher : The Electrochemical Society
Page : 338 pages
File Size : 28,80 MB
Release : 2015
Category :
ISBN : 1607685949
Author : Wen Siang Lew
Publisher : Springer Nature
Page : 439 pages
File Size : 22,79 MB
Release : 2021-01-09
Category : Science
ISBN : 9811569126
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author : Jennifer Rupp
Publisher : Springer Nature
Page : 386 pages
File Size : 33,41 MB
Release : 2021-10-15
Category : Technology & Engineering
ISBN : 3030424243
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.